CYK256K16MCBU-70BVXIT

CYK256K16MCBU-70BVXIT Datasheet

CYK256K16MCCB MoBL3

Part	Datasheet
CYK256K16MCBU-70BVXIT	CYK256K16MCBU-70BVXIT (pdf)

Related Parts	Information
CYK256K16MCBU-70BVXI	CYK256K16MCBU-70BVXI

PDF Datasheet Preview
CYK256K16MCCB MoBL3 4-Mbit 256K x 16 Pseudo Static RAM • Wide voltage range • Access time 55 ns, 60 ns and 70 ns • Ultra-low active power Typical active current 1 mA f = 1 MHz Typical active current 8 mA f = fmax 70-ns speed • Ultra low standby power • Automatic power-down when deselected • CMOS for optimum speed/power • Offered in a 48-ball BGA package Functional Description[1] The CYK256K16MCCB is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life in portable applications such as cellular telephones. The device can be put into standby mode when deselected CE HIGH or both BHE and BLE are HIGH . The input/output pins I/O0 through I/O15 are placed in a high-impedance state when deselected CE HIGH , outputs are disabled OE HIGH , both Byte High Enable and Byte Low Enable are disabled BHE, BLE HIGH , or during a write operation CE LOW and WE LOW . Writing to the device is accomplished by taking Chip Enable CE LOW and Write Enable WE input LOW. If Byte Low Enable BLE is LOW, then data from I/O pins I/O0 through I/O7 is written into the location specified on the address pins A0 through A17 . If Byte High Enable BHE is LOW, then data from I/O pins I/O8 through I/O15 is written into the location specified on the address pins A0 through A17 . Reading from the device is accomplished by taking Chip Enable CE LOW and Output Enable OE LOW while forcing the Write Enable WE HIGH. If Byte Low Enable BLE is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable BHE is LOW, then data from memory will appear on I/O8 to I/O15. Refer to the truth table for a complete description of read and write modes. ROW DECODER A11 A12 A13 A14 A15 A16 A17 SENSE AMPS Logic Block Diagram A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 DATA IN DRIVERS 256K x 16 RAM Array COLUMN DECODER I/O0 I/O7 I/O8 I/O15 Power- Down Circuit BHE BLE BHE WE CE OE BLE Note For best practice recommendations, please refer to the CY application note System Design Guidelines on Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 [+] Feedback Pin Configuration[2, 3, 4] CYK256K16MCCB MoBL3 VFBGA Top View 12 3 4 BLE OE A0 A1 A2 NC I/O8 BHE A3 A4 CE I/O0 I/O9 I/O10 A5 A6 I/O1 I/O2 VSS I/O11 A17 A7 I/O3 Vcc VCC I/O12 DNU A16 I/O4 Vss I/O14 I/O13 A14 A15 I/O5 I/O6 I/O15 NC A12 A13 WE I/O7 A9 A10 A11 Product Portfolio Product CYK256K16MCCB VCC Range V Min. Typ.[5] Ordering Information Speed ns Ordering Code 55 CYK256K16MCCBU-55BVI CYK256K16MCBU-55BVXI 60 CYK256K16MCCBU-60BVI 70 CYK256K16MCCBU-70BVI CYK256K16MCBU-70BVXI Package Diagram Package Type 51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm 48-ball Fine Pitch BGA 6 mm x 8mm x mm Pb-Free 51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm 51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm 48-ball Fine Pitch BGA 6 mm x 8mm x mm Pb-Free Operating Range Industrial Industrial Note H = Logic HIGH, L = Logic LOW, X = Don’t Care. Page 8 of 10 [+] Feedback CYK256K16MCCB MoBL3 Package Diagram TOP VIEW A1 CORNER 12 3 4 5 6 A B C D E F G H 48-ball VFBGA 6 x 8 x 1 mm 51-85150 BOTTOM VIEW A1 CORNER M C M C A B Ø0.30±0.05 48X 6 54 3 2 1 A B C D E F G H B 0.15 4X C MAX. SEATING PLANE C 51-85150-*D MAX. MoBL is a registered trademark, and More Battery Life and MoBL3 are trademarks, of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders. Page 9 of 10 Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 314013 See ECN RKF Added Pb-Free parts to the Ordering information 397852 See ECN SYT Changed address of Cypress Semiconductor Corporation on Page# 1 from “3901 North First Street” to “198 Champion Court” Changed typo in ordering code from CYK256K16MCCB to CYK256K16MCCBU in the “Ordering Information” on Page#8 522566 See ECN NXR Changed VIL Max spec from V to V in DC Electrical Characteristics table Page 10 of 10 [+] Feedback

PDF Datasheet Preview

CYK256K16MCCB MoBL3
4-Mbit 256K x 16 Pseudo Static RAM
• Wide voltage range
• Access time 55 ns, 60 ns and 70 ns
• Ultra-low active power

Typical active current 1 mA f = 1 MHz Typical active current 8 mA f = fmax 70-ns speed
• Ultra low standby power
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a 48-ball BGA package

Functional Description[1]

The CYK256K16MCCB is a high-performance CMOS Pseudo static RAM organized as 256K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life in portable applications such as cellular telephones. The device
can be put into standby mode when deselected CE HIGH or both BHE and BLE are HIGH . The input/output pins I/O0 through I/O15 are placed in a high-impedance state when deselected CE HIGH , outputs are disabled OE HIGH , both Byte High Enable and Byte Low Enable are disabled BHE, BLE HIGH , or during a write operation CE LOW and WE LOW .

Writing to the device is accomplished by taking Chip Enable CE LOW and Write Enable WE input LOW. If Byte Low Enable BLE is LOW, then data from I/O pins I/O0 through I/O7 is written into the location specified on the address pins A0 through A17 . If Byte High Enable BHE is LOW, then data from I/O pins I/O8 through I/O15 is written into the location specified on the address pins A0 through A17 .

Reading from the device is accomplished by taking Chip Enable CE LOW and Output Enable OE LOW while forcing the Write Enable WE HIGH. If Byte Low Enable BLE is LOW, then data from the memory location specified by the address pins will appear on I/O0 to I/O7. If Byte High Enable BHE is LOW, then data from memory will appear on I/O8 to I/O15. Refer to the truth table for a complete description of read and write modes.

ROW DECODER A11 A12 A13 A14 A15 A16 A17

SENSE AMPS

Logic Block Diagram

A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0

DATA IN DRIVERS 256K x 16

RAM Array

COLUMN DECODER

I/O0 I/O7 I/O8 I/O15

Power- Down Circuit

BHE BLE

BHE WE

CE OE BLE

Note For best practice recommendations, please refer to the CY application note System Design Guidelines on

Cypress Semiconductor Corporation
• 198 Champion Court
• San Jose, CA 95134-1709
• 408-943-2600
[+] Feedback

Pin Configuration[2, 3, 4]

CYK256K16MCCB MoBL3

VFBGA

Top View 12 3 4

BLE OE A0 A1 A2 NC

I/O8 BHE A3 A4 CE I/O0

I/O9 I/O10 A5 A6 I/O1 I/O2

VSS I/O11 A17 A7 I/O3 Vcc

VCC I/O12 DNU A16 I/O4 Vss

I/O14 I/O13 A14 A15 I/O5 I/O6

I/O15 NC A12 A13 WE I/O7

A9 A10 A11

Product Portfolio

Product CYK256K16MCCB

VCC Range V

Min.

Typ.[5]
Ordering Information

Speed ns
Ordering Code
55 CYK256K16MCCBU-55BVI

CYK256K16MCBU-55BVXI
60 CYK256K16MCCBU-60BVI
70 CYK256K16MCCBU-70BVI

CYK256K16MCBU-70BVXI

Package Diagram

Package Type
51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm
48-ball Fine Pitch BGA 6 mm x 8mm x mm Pb-Free
51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm
51-85150 48-ball Fine Pitch BGA 6 mm x 8mm x mm
48-ball Fine Pitch BGA 6 mm x 8mm x mm Pb-Free

Operating Range

Industrial

Industrial

Note H = Logic HIGH, L = Logic LOW, X = Don’t Care.

Page 8 of 10 [+] Feedback

CYK256K16MCCB MoBL3

Package Diagram

TOP VIEW

A1 CORNER
12 3 4 5 6

A B C D E F G H
48-ball VFBGA 6 x 8 x 1 mm 51-85150

BOTTOM VIEW A1 CORNER

M C M C A B Ø0.30±0.05 48X
6 54 3 2 1

A B C D E F G H

B 0.15 4X

C MAX.

SEATING PLANE C
51-85150-*D

MAX.

MoBL is a registered trademark, and More Battery Life and MoBL3 are trademarks, of Cypress Semiconductor Corporation. All product and company names mentioned in this document may be the trademarks of their respective holders.

Page 9 of 10

Cypress Semiconductor Corporation, The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
314013 See ECN RKF Added Pb-Free parts to the Ordering information
397852 See ECN SYT Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Changed typo in ordering code from CYK256K16MCCB to
CYK256K16MCCBU in the “Ordering Information” on Page#8
522566 See ECN NXR Changed VIL Max spec from V to V in DC Electrical Characteristics table

Page 10 of 10 [+] Feedback

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived CYK256K16MCBU-70BVXIT Datasheet file may be downloaded here without warranties.

Datasheet ID: CYK256K16MCBU-70BVXIT 508207