FDB3632 / FDP3632 / FDI3632 / FDH3632
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FDI3632 (pdf) |
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FDB3632 / FDP3632 / FDI3632 / FDH3632 December 2008 FDB3632 / FDP3632 / FDI3632 / FDH3632 N-Channel MOSFET 100V, 80A, • rDS ON = Typ. , VGS = 10V, ID = 80A • Qg tot = 84nC Typ. , VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Qualified to AEC Q101 • RoHS Compliant • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems • High Voltage Synchronous Rectifier • Direct Injection / Diesel Injection Systems • 42V Automotive Load Control • Electronic Valve Train Systems DRAIN FLANGE S DG G DRAIN FLANGE DRAIN FLANGE TO-220AB TO-263AB TO-262AB FDP SERIES FDB SERIES FDI SERIES MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous TC < 111oC, VGS = 10V Continuous Tamb = 25oC, VGS = 10V, = 43oC/W Pulsed Single Pulse Avalanche Energy Note 1 Power dissipation Derate above 25oC Operating and Storage Temperature DRAIN G TO-247 FDH SERIESD Ratings 100 ±20 80 12 Figure 4 393 310 -55 to 175 Units V A mJ W W/oC Thermal Characteristics Thermal Resistance Junction to Case TO-220, TO-263, TO-262, TO-247 Thermal Resistance Junction to Ambient TO-220, TO-262 Note 2 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area Thermal Resistance Junction to Ambient TO-247 Note 2 62 43 30 oC/W oC/W oC/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: Reliability data can be found at All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems Package Marking and Ordering Information Device Marking FDB3632 FDP3632 FDI3632 FDH3632 Device FDB3632 FDP3632 FDI3632 FDH3632 Package TO-263AB TO-220AB TO-262AB TO-247 Reel Size 330mm Tube Tape Width 24mm N/A N/A N/A Quantity 800 units 50 units 50 units 30 units Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Source Leakage Current ID = 250µA, VGS = 0V VDS = 80V VGS = 0V TC= 150oC VGS = ±20V ±100 nA On Characteristics VGS TH Gate to Source Threshold Voltage rDS ON Drain to Source On Resistance VGS = VDS, ID = 250µA ID=80A, VGS=10V ID =40A, VGS = 6V, ID=80A, VGS=10V, TC=175oC - Dynamic Characteristics CISS COSS CRSS Qg TOT Qg TH Qgs Qgs2 Qgd VDS = 25V, VGS = 0V, f = 1MHz 6000 VGS = 0V to 10V VGS = 0V to 2V VDD = 50V ID = 80A Ig = 1.0mA |
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