H11C4M
H11C4M Datasheet
H11C4M PHOTO SCR OPTOCOUPLER
| Part | Datasheet |
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H11C4M |
H11C4M (pdf) |
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| H11C4M PHOTO SCR OPTOCOUPLER CentralTM Semiconductor Corp. DESCRIPTION The Central Semiconductor H11C4M is a galliumarsenide infrared emitting Diode optically coupled with a light activated silicon controlled rectifier in a DIP-6 dual-in-line package. This device is designed for applications requiring a high degree of isolation between triggering and load circuits. DIP-6 CASE APPLICATIONS • Communications equipment • Solid state relays • Portable equipment • Low power logic circuits requiring a high degree of input/output isolation MAXIMUM RATINGS TA=25°C Isolation Voltage Isolation Resistance VIO=500V Operating Temperature Range Storage Temperature Range MARKING H11C4M VISO RISO TJ Tstg 5000 1011 -30 to +100 -55 to +125 UNITS VRMS Ω °C °C INPUT MAXIMUM RATINGS LED TA=25°C Continuous Forward Current Peak Forward Surge Current tp=1us IFSM Power Dissipation UNITS mA V A mW OUTPUT MAXIMUM RATINGS SCR TA=25°C SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM VRGM RMS On-State Current IT RMS Peak On-State Current tp=100us Peak One Cycle Surge tp=10ms ITSM INPUT ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted TEST CONDITIONS VR=3.0V IF=10mA VR=0V, f=1.0MHz MAX 10 UNITS V mA A UNITS uA V pF R2 8-December 2008 CentralTM Semiconductor Corp. H11C4M PHOTO SCR OPTOCOUPLER |
| More datasheets: 100351QI | 100351QIX | 100351SC | 100351SCX | BF246B | BF246B_J35Z | ADNS-7630 | ADNS-7630-TR | ADNK-7633 | VC2-01 |
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