BF246B

BF246B Datasheet

BF246B N-Channel Switch

Part	Datasheet
BF246B	BF246B (pdf)

Related Parts	Information
BF246B_J35Z	BF246B_J35Z

PDF Datasheet Preview
BF246B N-Channel Switch BF246B N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. • Sourced from process • See J111 for characteristics. TO-92 DGS Drain Gate Source Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Parameter Value VDG VGS IGF TJ, TSTG Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range 25 -25 50 -55 ~ 150 * These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Notes These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta = 25°C unless otherwise noted Parameter Conditions Off Characteristics V BR GSS Gate-Source Breakdown Voltage IGSS VGS off Gate-Source Cutoff Voltage On Characteristics* IDSS Zero-Gate Voltage Drain Current * IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 10nA VDS = 15V, VGS = 0 Thermal Characteristics Ta = 25°C unless otherwise noted Parameter Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Value 625 125 357 Units V mA °C Min. Max Units Units mW/°C °C/W °C/W 2005 Fairchild Semiconductor Corporation BF246B N-Channel Switch Mechanical Dimensions TO-92

PDF Datasheet Preview

BF246B N-Channel Switch

BF246B

N-Channel Switch
• This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers.
• Sourced from process
• See J111 for characteristics.

TO-92 DGS

Drain Gate Source

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Parameter

Value

VDG VGS IGF TJ, TSTG

Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range
25 -25 50 -55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may e impaired. Notes These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta = 25°C unless otherwise noted

Parameter

Conditions

Off Characteristics

V BR GSS Gate-Source Breakdown Voltage

IGSS

VGS off

Gate-Source Cutoff Voltage

On Characteristics*

IDSS

Zero-Gate Voltage Drain Current *

IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 10nA

VDS = 15V, VGS = 0

Thermal Characteristics Ta = 25°C unless otherwise noted

Parameter

Total Device Dissipation

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient

Value
625 125 357

Units

V mA °C

Min. Max Units

Units
mW/°C °C/W °C/W
2005 Fairchild Semiconductor Corporation

BF246B N-Channel Switch

Mechanical Dimensions

TO-92

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Datasheet ID: BF246B 513525