FDS7760A

FDS7760A Datasheet

FDS7760A

Part	Datasheet
FDS7760A	FDS7760A (pdf)

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FDS7760A January 2002 FDS7760A N-Channel Logic Level MOSFET This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • DC/DC converter • Load switch • Motor drives • 15 A, 30 V. RDS ON = VGS = 10 V RDS ON = 8 VGS = V. • Low gate charge 37nC typical • Fast switching speed. • High performance trench technology for extremely low RDS ON • High power and current handling capability. SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation Note 1a Note 1a Note 1b Note 1c TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Note 1a Thermal Resistance, Junction-to-Ambient Note 1c Thermal Resistance, Junction-to-Case Note 1 Package Outlines and Ordering Information Device Marking Device Reel Size FDS7760A FDS7760A 13’’ 5 6 7 8 Ratings 30 ±20 15 60 1 -55 to +150 50 10 sec Tape Width 12mm 4 3 2 1 Units °C/W °C/W °C/W Quantity 2500 units 2002 Fairchild Semiconductor Corporation FDS7760A DMOS Electrical Characteristics Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings Note 2 W DSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 15 A 360 mJ Maximum Drain-Source Avalanche Current Off Characteristics BVDSS Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V mV/°C IGSSF

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FDS7760A

January 2002

FDS7760A

N-Channel Logic Level MOSFET

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
• DC/DC converter
• Load switch
• Motor drives
• 15 A, 30 V. RDS ON = VGS = 10 V RDS ON = 8 VGS = V.
• Low gate charge 37nC typical
• Fast switching speed.
• High performance trench technology for extremely
low RDS ON
• High power and current handling capability.

SO-8

G SS S

Absolute Maximum Ratings TA=25oC unless otherwise noted

VDSS VGSS ID

Parameter

Drain-Source Voltage Gate-Source Voltage Drain Current Continuous

Pulsed Power Dissipation for Single Operation

Note 1a

Note 1a Note 1b

Note 1c

TJ, TSTG

Operating and Storage Junction Temperature Range

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient Note 1a

Thermal Resistance, Junction-to-Ambient Note 1c

Thermal Resistance, Junction-to-Case

Note 1
Package Outlines and Ordering Information

Device Marking

Device

Reel Size

FDS7760A

FDS7760A
13’’
5 6 7 8

Ratings
30 ±20 15 60
1 -55 to +150
50 10 sec

Tape Width 12mm
4 3 2 1

Units
°C/W °C/W °C/W

Quantity 2500 units
2002 Fairchild Semiconductor Corporation

FDS7760A

DMOS Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings Note 2

W DSS

Single Pulse Drain-Source Avalanche Energy

VDD = 15 V,

ID = 15 A
360 mJ

Maximum Drain-Source Avalanche

Current

Off Characteristics

BVDSS

Breakdown Voltage VGS = 0 V, ID = 250 µA

IDSS

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V
mV/°C

IGSSF

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Datasheet ID: FDS7760A 514373