FD6M016N03

FD6M016N03 Datasheet

FD6M016N03 30V/80A Synchronous Rectifier Module

Part	Datasheet
FD6M016N03	FD6M016N03 (pdf)

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FD6M016N03 30V/80A Synchronous Rectifier Module FD6M016N03 30V/80A Synchronous Rectifier Module June 2008 Power-SPMTM General Features • Very High Rectification Efficiency at Output 12V • Integrated Solution for Saving Board Space • RoHS Compliant MOSFET Features • VDSS = 30V • QG TOTAL = 132nC Typ. , VGS = 5V • RDS ON = 1.3mΩ Typ. , VGS = 10V, ID = 40A • Low Miller Charge • Low Qrr Body Diode • UIS Capability Single Pulse and Repetitive Pulse • Fully Isolated package The FD6M016N03 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS ON MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise. • High Current Isolated Converter • Distributed Power Architectures • Synchronous rectifivation • DC/DC Converter • Battery supplied application • ORing MOSFET Block Diagram 15 EPM15 Package 2345 Figure FD6M016N03 Module Block Diagram 2008 Fairchild Semiconductor Corporation FD6M016N03 30V/80A Synchronous Rectifier Module Pin Configuration and Pin Description Top View G1 NC G2 Figure Pinmap of FD6M016N03 Pin Number 1 2~5 6 7 8 9 10 11 ~ 14 15 Pin Name D1 S1 G1 NC G2 S2 D2 Pin Description Drain of Q1, MOSFET Source of Q1, MOSFET Gate of Q1, MOSFET No Connection No Connection No Connection Gate of Q2, MOSFET Source of Q2, MOSFET Drain of Q2, MOSFET Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified VDS VGS ID EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current, Continuous VGS = 10V Single Pulse Avalanche Energy Operating and Storage Temperature Range Note1 Note1,2 Rating 30 ±20 80 1584 -40 ~ 150 Unit V A mJ °C

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FD6M016N03 30V/80A Synchronous Rectifier Module

FD6M016N03
30V/80A Synchronous Rectifier Module

June 2008

Power-SPMTM

General Features
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• RoHS Compliant

MOSFET Features
• VDSS = 30V
• QG TOTAL = 132nC Typ. , VGS = 5V
• RDS ON = 1.3mΩ Typ. , VGS = 10V, ID = 40A
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability Single Pulse and Repetitive Pulse
• Fully Isolated package

The FD6M016N03 is one product in the Power-SPMTM family that Fairchild has newly developed and designed to be most suitable for more compact and more efficient synchronous rectification applications such as internet server power supplies and telecom system power supplies. For higher efficiency, it includes built-in very low RDS ON MOSFETs. This Power-SPM device can be used in the secondary side of the PWM transformer of forward/bridge converter to provide high current rectification at output voltages ranging from 12 Volts down to 5 Volts. With this product, it is possible to design the secondary side of power supply systems with reduced parasitic elements resulting in minimized voltage spike and EMI noise.
• High Current Isolated Converter
• Distributed Power Architectures
• Synchronous rectifivation
• DC/DC Converter
• Battery supplied application
• ORing MOSFET

Block Diagram
15 EPM15 Package
2345

Figure FD6M016N03 Module Block Diagram
2008 Fairchild Semiconductor Corporation

FD6M016N03 30V/80A Synchronous Rectifier Module

Pin Configuration and Pin Description Top View

G1 NC G2

Figure Pinmap of FD6M016N03

Pin Number
1 2~5
6 7 8 9 10 11 ~ 14 15

Pin Name

D1 S1 G1 NC G2 S2 D2

Pin Description

Drain of Q1, MOSFET Source of Q1, MOSFET Gate of Q1, MOSFET

No Connection No Connection No Connection Gate of Q2, MOSFET Source of Q2, MOSFET Drain of Q2, MOSFET

Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified

VDS VGS ID EAS TJ, TSTG

Parameter Drain to Source Voltage Gate to Source Voltage Drain Current, Continuous VGS = 10V Single Pulse Avalanche Energy Operating and Storage Temperature Range

Note1

Note1,2

Rating 30 ±20 80
1584 -40 ~ 150

Unit V A mJ °C

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Datasheet ID: FD6M016N03 514024