1N4446TR

1N4446TR Datasheet


1N4446

Part Datasheet
1N4446TR 1N4446TR 1N4446TR (pdf)
Related Parts Information
1N4446_T50R 1N4446_T50R 1N4446_T50R
1N4446 1N4446 1N4446
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1N4446
1N4446

Small Signal Diode

DO-35

Color Band Denotes Cathode

Absolute Maximum Ratings* T = 25°C unless otherwise noted A

Parameter

Value

VRRM

IF AV

Average Rectified Forward Current

IFSM

Non-repetitive Peak Forward Surge Current

Pulse Width = second

Pulse Width = microsecond

Tstg

Storage Temperature Range

Operating Junction Temperature
-65 to +200 175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES 1 These ratings are based on a maximum junction temperature of 200 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Parameter

Power Dissipation Thermal Resistance, Junction to Ambient

Value
500 300

Units

V mA A °C °C

Units
mW °C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Parameter

Test Conditions

Breakdown Voltage

Forward Voltage

Total Capacitance

IR = 100 µA

IF = 20 mA

VR = 20 V VR = 20 V, TA = 150°C VR = 0, f = MHz

IF = 10 mA, VR = 6 V, RL = 100 Irr = mA

Min Max Units
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Datasheet ID: 1N4446TR 512986