BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS
Part | Datasheet |
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BDT61-S (pdf) |
Related Parts | Information |
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BDT61B-S |
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BDT61C-S |
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BDT61A-S |
PDF Datasheet Preview |
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BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C ● 50 W at 25°C Case Temperature ● 4 A Continuous Collector Current ● Minimum hFE of 750 at 1.5V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE TOP VIEW Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature unless otherwise noted RATING BDT61 OBSOLETE Collector-base voltage IE = 0 Collector-emitter voltage IB = 0 Emitter-base voltage Continuous collector current Continuous base current Continuous device dissipation at or below 25°C case temperature see Note 1 Continuous device dissipation at or below 25°C free air temperature see Note 2 Operating junction temperature range Storage temperature range Operating free-air temperature range BDT61A BDT61B BDT61C BDT61 BDT61A BDT61B BDT61C NOTES Derate linearly to 150°C case temperature at the rate of W/°C. VCBO VCEO VEBO IC IB Ptot Tj Tstg TA Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. VALUE 60 80 100 120 60 80 100 120 5 4 50 2 -65 to +150 -65 to +150 -65 to +150 UNIT V A W °C °C °C PRODUCT INFORMATION BDT61, BDT61A, BDT61B, BDT61C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature unless otherwise noted PARAMETER TEST CONDITIONS MIN TYP MAX BDT61 Collector-emitter V BR CEO breakdown voltage IC = 30 mA IB = 0 see Note 3 BDT61A BDT61B BDT61C VCE = 30 V IB = 0 BDT61 ICEO |
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