1N4446
Part | Datasheet |
---|---|
![]() |
1N4446_T50R (pdf) |
Related Parts | Information |
---|---|
![]() |
1N4446TR |
![]() |
1N4446 |
PDF Datasheet Preview |
---|
1N4446 1N4446 Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings* T = 25°C unless otherwise noted A Parameter Value VRRM IF AV Average Rectified Forward Current IFSM Non-repetitive Peak Forward Surge Current Pulse Width = second Pulse Width = microsecond Tstg Storage Temperature Range Operating Junction Temperature -65 to +200 175 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES 1 These ratings are based on a maximum junction temperature of 200 degrees C. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Parameter Power Dissipation Thermal Resistance, Junction to Ambient Value 500 300 Units V mA A °C °C Units mW °C/W Electrical Characteristics TA = 25°C unless otherwise noted Parameter Test Conditions Breakdown Voltage Forward Voltage Total Capacitance IR = 100 µA IF = 20 mA VR = 20 V VR = 20 V, TA = 150°C VR = 0, f = MHz IF = 10 mA, VR = 6 V, RL = 100 Irr = mA Min Max Units |
More datasheets: GNT428ABG | GNT428CBEG | GNT428ABTG | GNT448ABTG | BDT61B-S | BDT61-S | BDT61C-S | BDT61A-S | C702 10M008 9004 | 1N4446TR |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived 1N4446_T50R Datasheet file may be downloaded here without warranties.