2N5306_D74Z
2N5306_D74Z Datasheet
2N5306
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2N5306_D74Z |
2N5306_D74Z (pdf) |
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2N5306 |
2N5306 |
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| 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process • See MPSA14 for characteristics. TO-92 Absolute Maximum Ratings * TA=25°C unless otherwise noted Emitter Collector Base Parameter Value Units VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage Collector Current - Continuous TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ +150 * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES These ratings are based on a maximum junction temperature of 150 degrees C. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TA=25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units Off Characteristics V BR CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 V BR CBO Collector-Base Breakdown Voltage IC = 0.1µA, IE = 0 V BR EBO Emitter-Base Breakdown Voltage IE = 0.1µA, IC = 0 ICBO Collector Cutoff Current VCB = 25V, IE = 0 VCB = 25V, IE = 0, Ta = 100°C IEBO Emitter Cutoff Current VEB = 12V, IC = 0 On Characteristics * |
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