FQPF3N50C
FQPF3N50C Datasheet
FQP3N50C/FQPF3N50C 500V N-Channel MOSFET
| Part | Datasheet |
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FQPF3N50C |
FQPF3N50C (pdf) |
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| FQP3N50C/FQPF3N50C 500V N-Channel MOSFET FQP3N50C/FQPF3N50C 500V N-Channel MOSFET • 3 A, 500 V, RDS on = VGS = 10 V • Low gate charge typical 10 nC • Low Crss typical pF • Fast switching • 100 % avalanche tested • Improved dv/dt capability These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. TO-220 FQP Series Absolute Maximum Ratings Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Drain-Source Voltage Drain Current - Continuous TC = 25°C - Continuous TC = 100°C Drain Current - Pulsed Note 1 Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25°C - Derate above 25°C Note 2 Note 1 Note 1 Note 3 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient 2005 Fairchild Semiconductor Corporation TO-220F FQPF Series ● ● FQP3N50C FQPF3N50C ± 30 -55 to +150 Units V A V mJ A mJ V/ns W/°C °C °C FQP3N50C FQPF3N50C Units °C/W °C/W °C/W FQP3N50C/FQPF3N50C 500V N-Channel MOSFET Package Marking and Ordering Information Device Marking FQP3N50C FQPF3N50C Device FQP3N50C FQPF3N50C Package TO-220 TO-220F Reel Size --- Tape Width --- Electrical Characteristics TC = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Off Characteristics BVDSS IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V On Characteristics VGS th RDS on Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = A VDS = 40 V, ID = A Note 4 Dynamic Characteristics Ciss Coss Crss VDS = 25 V, VGS = 0 V, f = MHz Switching Characteristics td on tr td off tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 250 V, ID = 3 A, RG = 25 Note 4, 5 VDS = 400 V, ID = 3 A, VGS = 10 V Note 4, 5 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage |
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