APTM50UM25SG
APTM50UM25SG Datasheet
APTM50UM25S
| Part | Datasheet |
|---|---|
APTM50UM25SG |
APTM50UM25SG (pdf) |
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| APTM50UM25S Single switch Series & parallel diodes MOSFET Power Module VDSS = 500V RDSon = max Tj = 25°C ID = 149A Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Low stray inductance - M6 power connectors - M4 signal connectors • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C 1250 IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1600 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website APTM50UM25S All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS= 500V VGS = 0V,VDS= 400V Tj = 25°C Tj = 125°C RDS on Drain Source on Resistance |
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