SFH9240

SFH9240 Datasheet

SFH9240

Part	Datasheet
SFH9240	SFH9240 (pdf)

PDF Datasheet Preview
Advanced Power MOSFET SFH9240 ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current 10 µA Max. VDS = -200V ! Lower RDS ON Typ. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25oC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 ” from case for 5-seconds BVDSS = -200 V RDS on = ID = -11 A TO-3P 1.Gate Drain Source Value -200 -11 -44 +_ 30 807 -11 126 - 55 to +150 Units V A V mJ A mJ V/ns W/oC Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -- Max. -40 Units oC/W SFH9240 P-CHANNEL POWER MOSFET Electrical Characteristics TC=25oC unless otherwise specified Symbol BVDSS VGS th IGSS

PDF Datasheet Preview

Advanced Power MOSFET

SFH9240
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current 10 µA Max. VDS = -200V ! Lower RDS ON Typ.

Absolute Maximum Ratings

Symbol VDSS ID

IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25oC Continuous Drain Current TC=100oC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25oC

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 ” from case for 5-seconds

BVDSS = -200 V RDS on = ID = -11 A

TO-3P
1.Gate Drain Source

Value -200 -11 -44 +_ 30 807 -11 126
- 55 to +150

Units V

A V mJ A mJ V/ns W/oC

Thermal Resistance

Characteristic Junction-to-Case

Case-to-Sink Junction-to-Ambient

Typ. --

Max. -40

Units oC/W

SFH9240

P-CHANNEL POWER MOSFET

Electrical Characteristics TC=25oC unless otherwise specified

Symbol BVDSS

VGS th

IGSS

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Datasheet ID: SFH9240 634713