APTM20DHM20TG

APTM20DHM20TG Datasheet


APTM20DHM20TG

Part Datasheet
APTM20DHM20TG APTM20DHM20TG APTM20DHM20TG (pdf)
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APTM20DHM20TG

Asymmetrical - Bridge MOSFET Power Module

VDSS = 200V RDSon = typ Tj = 25°C ID = 89A Tc = 25°C

VBUS Q1

OUT1 OUT2

CR2 0/VBUS SENSE

NTC1
0/VBUS

VBUS SENSE

G4 S4 NT C2

VBUS SENSE

VB US

S1 G1

G4 S4
0/VBUS
0/VBUS SENSE

OUT2

OUT1

NTC2 NTC1

Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Features
• Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings Unit

VDSS

IDM VGS RDSon

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance

Tc = 25°C

Tc = 80°C
±30

PD Maximum Power Dissipation

Tc = 25°C

IAR Avalanche current repetitive and non repetitive EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy
2500

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on

APTM20DHM20TG

All ratings Tj = 25°C unless otherwise specified

Electrical Characteristics
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Datasheet ID: APTM20DHM20TG 648889