DSEP8-03A

DSEP8-03A Datasheet

DSEP 8-03A

Part	Datasheet
DSEP8-03A	DSEP8-03A (pdf)

PDF Datasheet Preview
DSEP 8-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 10 A VRRM = 300 V trr = 30 ns VRSM V 300 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight RthJC RthCH trr VRRM V Type DSEP 8-03A TO-220 AC C TAB A = Anode, C = Cathode, TAB = Cathode Conditions TC = 130°C rectangular, d = TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive TC = 25°C mounting torque typical r Conditions fo TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM t IF = 10 A TVJ = 150°C NoTVJ = 25°C IF = 1 A -di/dt = 50 A/µs VR = 30 V TVJ = 25°C VR = 100 V IF = 12 A -diF/dt = 100 A/µs TVJ = 100°C n Maximum Ratings si 60 ne0.4...0.6 • International standard package • Planar passivated chips • Very short recovery time • Extremely low switching losses • Low IRM-values • Soft recovery behaviour • Epoxy meets UL 94V-0 • Antiparallel diode for high frequency switching devices • Antisaturation diode • Snubber diode • Free wheeling diode in converters and motor control circuits • Rectifiers in switch mode power supplies SMPS • Inductive heating • Uninterruptible power supplies UPS Characteristic Values • Ultrasonic cleaners and welders typ. max. Advantages • Avalanche voltage rated for reliable EMI/RFI • Low IRM reduces: - Power dissipation within the diode - Turn-onlossinthecommutatingswitch

PDF Datasheet Preview

DSEP 8-03A

HiPerFREDTM Epitaxial Diode
with soft recovery

IFAV = 10 A VRRM = 300 V trr = 30 ns

VRSM V 300

Symbol IFRMS IFAVM

IFSM EAS

IAR TVJ TVJM Tstg Ptot Md Weight

RthJC RthCH trr

VRRM V

Type DSEP 8-03A

TO-220 AC

C TAB

A = Anode, C = Cathode, TAB = Cathode

Conditions

TC = 130°C rectangular, d =

TVJ = 45°C tp = 10 ms 50 Hz , sine TVJ = 25°C non-repetitive IAS = 2 A L = 180 µH VA = 1.5•VR typ. f = 10 kHz repetitive

TC = 25°C mounting torque typical
r Conditions fo TVJ = 25°C VR = VRRM

TVJ = 150°C VR = VRRM
t IF = 10 A TVJ = 150°C NoTVJ = 25°C

IF = 1 A -di/dt = 50 A/µs VR = 30 V TVJ = 25°C VR = 100 V IF = 12 A -diF/dt = 100 A/µs TVJ = 100°C
n Maximum Ratings
si 60
ne0.4...0.6
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies SMPS
• Inductive heating
• Uninterruptible power supplies UPS

Characteristic Values
• Ultrasonic cleaners and welders
typ. max.

Advantages
• Avalanche voltage rated for reliable

EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-onlossinthecommutatingswitch

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Datasheet ID: DSEP8-03A 644188