APT20N60SC3G

APT20N60SC3G Datasheet

APT20N60BC3 APT20N60SC3

Part	Datasheet
APT20N60SC3G	APT20N60SC3G (pdf)

Related Parts	Information
APT20N60BC3G	APT20N60BC3G

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APT20N60BC3 APT20N60SC3 600V 20.7A Super Junction MOSFET COOLMOS Power Semiconductors TO-247 D3PAK • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS All Ratings TC = 25°C unless otherwise specified. Symbol Parameter APT17N80BC3_SC3 UNIT VDSS ID IDM VGS VGSM Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Volts Amps ±20 Volts ±30 Total Power Dissipation TC = 25°C Linear Derating Factor Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 480V, ID = 20.7A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 690 °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX BVDSS RDS on Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 13.1A IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V, TC = 150°C 25 250 IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V ±100 VGS th Gate Threshold Voltage VDS = VGS, ID = 1mA CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - UNIT Volts Ohms

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APT20N60BC3 APT20N60SC3
600V 20.7A

Super Junction MOSFET

COOLMOS

Power Semiconductors

TO-247

D3PAK
• Ultra low RDS ON
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package

MAXIMUM RATINGS

All Ratings TC = 25°C unless otherwise specified.

Symbol Parameter

APT17N80BC3_SC3 UNIT

VDSS ID IDM VGS

VGSM

Drain-Source Voltage Continuous Drain Current TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient

Volts

Amps
±20 Volts
±30

Total Power Dissipation TC = 25°C

Linear Derating Factor

Watts W/°C

TJ,TSTG TL dv/dt IAR EAR EAS

Operating and Storage Junction Temperature Range

Lead Temperature from Case for 10 Sec. Drain-Source Voltage slope VDS = 480V, ID = 20.7A, TJ = 125°C Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 260 50 20 1 690
°C V/ns Amps mJ

STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions

MIN TYP MAX

BVDSS RDS on

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA Drain-Source On-State Resistance 2 VGS = 10V, ID = 13.1A

IDSS

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V, TC = 150°C
25 250

IGSS Gate-Source Leakage Current VGS = ±20V, VDS = 0V
±100

VGS th Gate Threshold Voltage VDS = VGS, ID = 1mA

CAUTION These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website -

UNIT Volts Ohms

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Datasheet ID: APT20N60SC3G 648641