APTGF50DH120TG

APTGF50DH120TG Datasheet


APTGF50DH120TG

Part Datasheet
APTGF50DH120TG APTGF50DH120TG APTGF50DH120TG (pdf)
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APTGF50DH120TG

Asymmetrical - Bridge NPT IGBT Power Module

Q1 G1

VBUS

VBUS SENSE

E1 OUT1 OUT2
0/VBU S SENSE

NT C1
0/VBU S

G4 E4 NT C2

VCES = 1200V IC = 50A Tc = 80°C

Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives

Features
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration

Benefits
• Outstanding performance at high frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C

Tj = 150°C 100A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF50DH120TG

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VCE sat

VGE th IGES

Collector Emitter saturation Voltage

Gate Threshold Voltage Gate Emitter Leakage Current
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Datasheet ID: APTGF50DH120TG 648794