APTGF50DH120TG
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APTGF50DH120TG (pdf) |
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APTGF50DH120TG Asymmetrical - Bridge NPT IGBT Power Module Q1 G1 VBUS VBUS SENSE E1 OUT1 OUT2 0/VBU S SENSE NT C1 0/VBU S G4 E4 NT C2 VCES = 1200V IC = 50A Tc = 80°C Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Features • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C Tj = 150°C 100A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF50DH120TG All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VCE sat VGE th IGES Collector Emitter saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current |
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