MMBT2222AK

MMBT2222AK Datasheet

MMBT2222AK NPN Epitaxial Silicon Transistor

Part	Datasheet
MMBT2222AK	MMBT2222AK (pdf)

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MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking SOT-23 1 Base Emitter Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Parameter VCBO VCEO VEBO IC PC TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range Value 75 40 6 600 350 -55 ~ 150 Units V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Parameter Test Condition BVCBO BVCEO BVEBO ICBO hFE Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain * VCE sat Collector-Emitter Saturation Voltage * VBE sat Base-Emitter Saturation Voltage * Current Gain Bandwidth Product Output Capacitance Noise Figure Turn On Time tOFF Turn Off Time * Pulse Test Pulse Duty IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 10µA, IC = 0 VCB = 60V, IE = 0 VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 20mA, VCE = 20V, f = 100MHz VCB = 10V, IE = 0, f = 1MHz IC = 100µA, VCE = 10V RS = f = 1MHz VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Min.

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MMBT2222AK NPN Epitaxial Silicon Transistor

MMBT2222AK

NPN Epitaxial Silicon Transistor

General Purpose Transistor

Marking

SOT-23 1 Base Emitter Collector

Absolute Maximum Ratings Ta = 25°C unless otherwise noted

Parameter

VCBO VCEO VEBO IC PC TJ, TSTG

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction and Storage Temperature Range

Value
75 40 6 600 350 -55 ~ 150

Units

V mA mW °C

Electrical Characteristics Ta=25°C unless otherwise noted

Parameter

Test Condition

BVCBO BVCEO BVEBO ICBO hFE

Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain *

VCE sat Collector-Emitter Saturation Voltage *

VBE sat Base-Emitter Saturation Voltage *

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

Turn On Time
tOFF

Turn Off Time
* Pulse Test Pulse Duty

IC = 10µA, IE = 0

IC = 10mA, IB = 0

IE = 10µA, IC = 0

VCB = 60V, IE = 0

VCE = 10V, IC = 0.1mA VCE = 10V, IC = 1mA VCE = 10V, IC = 10mA VCE = 10V, IC = 150mA VCE = 10V, IC = 500mA

IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA

IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA

IC = 20mA, VCE = 20V, f = 100MHz

VCB = 10V, IE = 0, f = 1MHz

IC = 100µA, VCE = 10V RS = f = 1MHz

VCC = 30V, IC = 150mA VBE = 0.5V, IB1 = 15mA

VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA

Min.

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Datasheet ID: MMBT2222AK 634402