MT9HTF3272AY 256MB MT9HTF6472AY 512MB MT9HTF12872AY 1GB
Part | Datasheet |
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MT9HTF6472AY-80ED4 (pdf) |
Related Parts | Information |
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MT9HTF6472AY-667B3 |
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MT9HTF12872AY-53EA1 |
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MT9HTF6472AY-53EB3 |
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MT9HTF12872AY-40EA1 |
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MT9HTF6472AY-40EB3 |
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MT9HTF12872AY-667A3 |
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MT9HTF3272AY-40EB3 |
PDF Datasheet Preview |
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256MB, 512MB, 1GB x72, SR, ECC 240-Pin DDR2 UDIMM Features DDR2 SDRAM UDIMM MT9HTF3272AY 256MB MT9HTF6472AY 512MB MT9HTF12872AY 1GB • 240-pin, unbuffered dual in-line memory module • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB 32 Meg x 72 , 512MB 64 Meg x 72 , or 1GB 128 Meg x 72 • VDD = VDDQ 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Single rank • Multiple internal device banks for concurrent operation • Programmable CAS latency CL • Posted CAS# additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts Figure 1 240-Pin UDIMM MO-237 R/C A/F Module height 30.0mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 240-pin DIMM lead-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 3, 4 2.5ns CL = 6 DDR2-800 3, 4 3.0ns CL = 6 DDR2-667 3.75ns CL = 5 DDR2-53E 5.0ns CL = 5 DDR2-40E Marking None I -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Contact Micron for product availability. Not available in 256MB density. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 |
More datasheets: 520-156-R | GB02SLT12-252 | 94669-102HLF | 94669-412HLF | 94669-414HLF | 94669-418HLF | MT9HTF6472AY-667B3 | MT9HTF12872AY-53EA1 | MT9HTF6472AY-53EB3 | MT9HTF12872AY-40EA1 |
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