GB02SLT12-252
GB02SLT12-252 Datasheet
GB02SLT12-252
| Part | Datasheet |
|---|---|
GB02SLT12-252 |
GB02SLT12-252 (pdf) |
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| GB02SLT12-252 Silicon Carbide Power Schottky Diode VRRM IF Tc = 135°C QC = 1200 V = 5A = 13 nC • High Avalanche UIS Capability • Enhanced Surge Current Capability • 175 °C Maximum Operating Temperature • Temperature Independent Switching Behavior • Positive Temperature Coefficient Of VF • Extremely Fast Switching Speeds • Superior Figure of Merit QC/IF Advantages Absolute Maximum Ratings Continuous Forward Current Non-Repetitive Peak Forward Surge Current, Half Sine Wave Non-Repetitive Peak Forward Current I2t Value Non-Repetitive Avalanche Energy Power Dissipation Operating and Storage Temperature Symbol VRRM IF,SM IF,max dt EAS Ptot Tj , Tstg Electrical Characteristics Per Leg Parameter Diode Forward Voltage Total Capacitive Charge Switching Time Total Capacitance Thermal / Mechanical Characteristics Thermal Resistance, Junction - Case RthJC Package case PIN 1 2 PIN 2 CASE TO 252 • Power Factor Correction PFC • Switched-Mode Power Supply SMPS • Solar Inverters • Wind Turbine Inverters • Motor Drives • Induction Heating • Uninterruptible Power Supply UPS • High Voltage Multipliers Conditions TC = 25 °C, D = 1 TC = 135 °C, D = 1 TC = 166 °C, D = 1 TC = 25 °C, tP = 10 ms TC = 110 °C, tP = 10 ms TC = 25 °C, tP = 10 µs TC = 25 °C, tP = 10 ms TC = 110 °C, tP = 10 ms IAV = 5 A, VDD = 60 V TC = 25 °C Values Unit 1200 -55 to 175 Conditions IF = 2 A, Tj = 25 °C IF = 2 A, Tj = 175 °C VR = 1200 V, Tj = 25 °C VR = 1200 V, Tj = 150 °C |
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