MT9HTF6472AY-667B3

MT9HTF6472AY-667B3 Datasheet


MT9HTF3272AY 256MB MT9HTF6472AY 512MB MT9HTF12872AY 1GB

Part Datasheet
MT9HTF6472AY-667B3 MT9HTF6472AY-667B3 MT9HTF6472AY-667B3 (pdf)
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PDF Datasheet Preview
256MB, 512MB, 1GB x72, SR, ECC 240-Pin DDR2 UDIMM Features

DDR2 SDRAM UDIMM

MT9HTF3272AY 256MB MT9HTF6472AY 512MB MT9HTF12872AY 1GB
• 240-pin, unbuffered dual in-line memory module
• Fast data transfer rates PC2-3200, PC2-4200,

PC2-5300, or PC2-6400
• 256MB 32 Meg x 72 , 512MB 64 Meg x 72 , or 1GB 128 Meg x 72
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Single rank
• Multiple internal device banks for concurrent
operation
• Programmable CAS latency CL
• Posted CAS# additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts

Figure 1 240-Pin UDIMM MO-237 R/C A/F

Module height 30.0mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 240-pin DIMM lead-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 3, 4 2.5ns CL = 6 DDR2-800 3, 4 3.0ns CL = 6 DDR2-667 3.75ns CL = 5 DDR2-53E 5.0ns CL = 5 DDR2-40E

Marking

None I
-80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Contact Micron for product availability.

Not available in 256MB density.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
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Datasheet ID: MT9HTF6472AY-667B3 648495