MT16VDDF6464A 512MB1 MT16VDDF12864A 1GB1
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MT16VDDF12864AY-40BJ1 (pdf) |
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512MB, 1GB x64, DR 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT16VDDF6464A 512MB1 MT16VDDF12864A 1GB1 For component data sheets, refer to Micron’s Web site: • 184-pin, unbuffered dual in-line memory module UDIMM • Fast data transfer rates PC2100, PC2700, or PC3200 • 512MB 64 Meg x 64 and 1GB 128 Meg x 64 • VDD = VDDQ = +2.5V -40B VDD = VDDQ = +2.6V • VDDSPD = +2.3V to +3.6V • 2.5V I/O SSTL_2-compatible • Internal, pipelined double data rate DDR 2n-prefetch architecture • Bidirectional data strobe DQS transmitted/ received with is, source-synchronous data capture • Differential clock inputs CK and CK# • Multiple internal device banks for concurrent operation • Dual rank • Selectable burst lengths BL 2, 4, or 8 • Auto precharge option • Auto refresh and self refresh modes 7.8125µs maximum average periodic refresh interval • Serial presence-detect SPD with EEPROM • Selectable CAS latency CL for maximum compatibility • Gold edge contacts Figure 1 184-Pin UDIMM MO-206 PCB height 25.4mm 1.0in Options Marking • Operating temperature2 Commercial 0°C TA +70°C Industrial TA +85°C • Package None I 184-pin DIMM standard 184-pin DIMM Pb-free • Memory clock, speed, CAS latency 5.0ns 200 MHz , 400 MT/s, CL = 3 -40B 6.0ns 167 MHz , 333 MT/s, CL = 7.5ns 133 MHz , 266 MT/s, CL = -335 -265 Notes Not recommended for new designs. Contact Micron for industrial temperature module offerings. Table 1: Speed Grade -40B -335 -265 Key Timing Parameters Industry Data Rate MT/s tRCD Nomenclature CL = 3 CL = CL = 2 tRC ns Notes PC3200 PC2700 PC2100 Notes The values of tRCD and tRP for -335 modules show 18ns to align with industry specifications actual DDR SDRAM device specifications are 15ns. Micron Technology, Inc., reserves the right to change products or specifications without notice. 2007 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. |
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