IPB13N03LB

IPB13N03LB Datasheet

IPB13N03LB

Part	Datasheet
IPB13N03LB	IPB13N03LB (pdf)

Related Parts	Information
IPB13N03LB G	IPB13N03LB G

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Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications • N-channel - Logic level • Excellent gate charge x R DS on product FOM • Very low on-resistance R DS on • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating RoHS compliant Product Summary V DS R DS on ,max ID IPB13N03LB 30 V 30 A PG-TO263-3 Type IPB13N03LB Package P-TO263-3 Marking 13N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 Pulsed drain current I D,pulse T C=100 °C T C=25 °C3 Avalanche energy, single pulse I D=30 A, R GS=25 dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 1 J-STD20 and JESD22 Value 30 120 64 ±20 52 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2006-05-10 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area5 IPB13N03LB

PDF Datasheet Preview

Power-Transistor

Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC1 for target applications
• N-channel - Logic level
• Excellent gate charge x R DS on product FOM
• Very low on-resistance R DS on
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating RoHS compliant

Product Summary V DS R DS on ,max ID

IPB13N03LB
30 V 30 A

PG-TO263-3

Type IPB13N03LB

Package P-TO263-3

Marking 13N03LB

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Continuous drain current

T C=25 °C2

Pulsed drain current

I D,pulse

T C=100 °C T C=25 °C3

Avalanche energy, single pulse

I D=30 A, R GS=25
dv /dt

I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C

Gate source voltage4

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category DIN IEC 68-1
1 J-STD20 and JESD22

Value 30 120 64
±20 52 -55 175 55/175/56

Unit A
mJ kV/µs V W °C
2006-05-10

Parameter

Symbol Conditions

Thermal characteristics

Thermal resistance, junction - case SMD version, device on PCB

R thJC R thJA
minimal footprint 6 cm2 cooling area5

IPB13N03LB

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Datasheet ID: IPB13N03LB 638182