APTGF100DA120T1G
APTGF100DA120T1G Datasheet
APTGF100DA120T1G
| Part | Datasheet |
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APTGF100DA120T1G |
APTGF100DA120T1G (pdf) |
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| APTGF100DA120T1G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 100A* Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration Pins 1/2 3/4 5/6 must be shorted together • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter VCES Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD RBSOA Pulsed Collector Current Gate Emitter Voltage Maximum Power Dissipation Max ratings Unit 1200 TC = 25°C TC = 80°C TC = 25°C 130* 100* ±20 TC = 25°C TJ = 150°C 200A 1150V Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF100DA120T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES VCE sat VGE th IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate Emitter Leakage Current |
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