SPD30P06P SPU30P06P
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SPD30P06P (pdf) |
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SPU30P06P |
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Power-Transistor Feature • P-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Final data SPD30P06P SPU30P06P P-TO251 Product Summary -60 V RDS on -30 A P-TO252 Type SPD30P06P SPU30P06P Package P-TO252 P-TO251 Ordering Code Q67042-S4018 Q67042-S4019 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=-30 A , VDD=-25V, ID puls EAR dv/dt IS=-30A, VDS=-48V, di/dt=-200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 VGS Ptot Tj , Tstg Gate pin1 Value -30 -120 ±20 125 +175 55/175/56 Drain pin 2 Source pin 3 Unit A kV/µs V W °C 2002-07-31 Thermal Characteristics Parameter Final data Symbol Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 1 RthJC RthJA SPD30P06P SPU30P06P Values Unit min. typ. max. - 100 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. |
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