MAGX-000035-09000P

MAGX-000035-09000P Datasheet

MAGX-000035-09000P

Part	Datasheet
MAGX-000035-09000P	MAGX-000035-09000P (pdf)

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MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - GHz • GaN on SiC D-Mode Transistor Technology • Unmatched, Ideal for Pulsed Applications • 50 V Typical Bias, Class AB • Common-Source Configuration • Thermally-Enhanced 3 x 6 mm 14-Lead DFN • MTTF = 600 years TJ < 200°C • Halogen-Free “Green” Mold Compound • RoHS* Compliant and 260°C Reflow Compatible • MSL-1 The MAGX-000035-09000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology. Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components. Ordering Information1,2 Package Functional Schematic 12 3456 7 MAGX-000035-09000P MAGX-000035-0900TP Bulk Packaging 100 Piece Reel 14 13 12 11 10 9 8 Pin Configuration3 MAGX-000035-PB3PPR Sample Board Pin No. Function Pin No. Function Reference Application Note M513 for reel size information. When ordering sample evaluation boards, choose a standard frequency range indicated on page 4/5 or specify a desired custom range. Custom requests may increase lead times. VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT No Connection No Connection * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT VGG/RFIN VDD/RFOUT Paddle4 MACOM recommends connecting unused package pins to ground. The exposed pad centered on the package bottom must be connected to RF and DC ground. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000035-09000P GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - GHz Typical Performance5 VDD = 50 V, IDQ = 200 mA, TA = 25°C Parameter 30 MHz 1 GHz Units Gain Saturated Power PSAT Power Gain at PSAT PAE PSAT Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on pages 4 and Electrical Specifications Freq. = GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω Parameter Test Conditions Symbol Min. Typ. Max. RF FUNCTIONAL TESTS CW Output Power P2.5 dB Pulsed Output Power P2.5 dB 100 µs and 10% Duty Cycle

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MAGX-000035-09000P

GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - GHz
• GaN on SiC D-Mode Transistor Technology
• Unmatched, Ideal for Pulsed Applications
• 50 V Typical Bias, Class AB
• Common-Source Configuration
• Thermally-Enhanced 3 x 6 mm 14-Lead DFN
• MTTF = 600 years TJ < 200°C
• Halogen-Free “Green” Mold Compound
• RoHS* Compliant and 260°C Reflow Compatible
• MSL-1

The MAGX-000035-09000P is a GaN on SiC unmatched power device offering the widest RF frequency capability, most reliable high voltage operation, lowest overall power transistor size, cost and weight in a “TRUE SMT” plastic-packaging technology.

Use of an internal stress buffer technology allows reliable operation at junction temperatures up to 200°C. The small package size and excellent RF performance make it an ideal replacement for costly flanged or metal-backed module components.
Ordering Information1,2

Package

Functional Schematic
12 3456 7

MAGX-000035-09000P MAGX-000035-0900TP

Bulk Packaging 100 Piece Reel
14 13 12 11 10 9 8

Pin Configuration3

MAGX-000035-PB3PPR

Sample Board

Pin No. Function Pin No. Function
Reference Application Note M513 for reel size information. When ordering sample evaluation boards, choose a standard
frequency range indicated on page 4/5 or specify a desired custom range. Custom requests may increase lead times.

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

No Connection

No Connection
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

VGG/RFIN

VDD/RFOUT

Paddle4

MACOM recommends connecting unused package pins to ground.

The exposed pad centered on the package bottom must be connected to RF and DC ground.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000035-09000P

GaN Wideband 90 W Pulsed Transistor in Plastic Package DC - GHz

Typical Performance5 VDD = 50 V, IDQ = 200 mA, TA = 25°C

Parameter
30 MHz
1 GHz

Units

Gain

Saturated Power PSAT

Power Gain at PSAT

PAE PSAT

Typical RF performance measured in M/A-COM Technology Solutions RF evaluation boards. See recommended tuning solutions on pages 4 and

Electrical Specifications Freq. = GHz, TA = 25°C, VDD = +50 V, Z0 = 50 Ω

Parameter

Test Conditions

Symbol Min. Typ. Max.

RF FUNCTIONAL TESTS

CW Output Power P2.5 dB

Pulsed Output Power P2.5 dB 100 µs and 10% Duty Cycle

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-09000P Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-09000P 646871