MT16HTF12864HY-53ED3

MT16HTF12864HY-53ED3 Datasheet

MT16HTF12864HY 1GB MT16HTF25664HY 2GB

Part	Datasheet
MT16HTF12864HY-53ED3	MT16HTF12864HY-53ED3 (pdf)

Related Parts	Information
MT16HTF12864HY-667B3	MT16HTF12864HY-667B3
MT16HTF12864HY-40EB3	MT16HTF12864HY-40EB3
MT16HTF12864HY-53EB3	MT16HTF12864HY-53EB3
MT16HTF25664HY-667E1	MT16HTF25664HY-667E1
MT16HTF12864HY-667D3	MT16HTF12864HY-667D3
MT16HTF12864HY-40ED3	MT16HTF12864HY-40ED3

PDF Datasheet Preview
1GB, 2GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTF12864HY 1GB MT16HTF25664HY 2GB • 200-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB 128 Meg x 64 or 2GB 256 Meg x 64 • VDD = VDDQ 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent opera- tion • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Serial presence detect SPD with EEPROM • Gold edge contacts • Dual rank Figure 1 200-Pin SODIMM MO-224 R/C E Module height 30mm 1.18in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 200-pin DIMM lead-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 3 Marking None I -80E -800 -667 -53E -40E Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Not recommended for new designs. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200

PDF Datasheet Preview

1GB, 2GB x64, DR 200-Pin DDR2 SDRAM SODIMM Features

DDR2 SDRAM SODIMM

MT16HTF12864HY 1GB MT16HTF25664HY 2GB
• 200-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400
• 1GB 128 Meg x 64 or 2GB 256 Meg x 64
• VDD = VDDQ 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Dual rank

Figure 1 200-Pin SODIMM MO-224 R/C E

Module height 30mm 1.18in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 200-pin DIMM lead-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3ns CL = 5 DDR2-667 3.75ns CL = 4 DDR2-533 5.0ns CL = 3 DDR2-400 3

Marking

None I
-80E -800 -667 -53E -40E

Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Not recommended for new designs.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT16HTF12864HY-53ED3 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT16HTF12864HY-53ED3 648307