TN6718A_D74Z

TN6718A_D74Z Datasheet


TN6718A

Part Datasheet
TN6718A_D74Z TN6718A_D74Z TN6718A_D74Z (pdf)
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TN6718A TN6718A TN6718A
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TN6718A

TN6718A

TO-226

NPN General Purpose Amplifier

This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from Process See TN6717A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Parameter

Value

VCEO

Collector-Emitter Voltage

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC TJ, Tstg

Collector Current - Continuous Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Units V A °C

NOTES 1 These ratings are based on a maximum junction temperature of 150°C.
2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

TN6718A 1 8 50

Units

W mW/°C °C/W °C/W
1997 Fairchild Semiconductor

TN6718A

NPN General Purpose Amplifier
continued

Electrical Characteristics

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

BVCEO Collector-Emitter Breakdown Voltage
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Datasheet ID: TN6718A_D74Z 634805