MAGX-000912-SB1PPR

MAGX-000912-SB1PPR Datasheet

MAGX-000912-250L00

Part	Datasheet
MAGX-000912-SB1PPR	MAGX-000912-SB1PPR (pdf)

Related Parts	Information
MAGX-000912-250L00	MAGX-000912-250L00

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MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty • GaN on SiC Depletion-Mode Transistor Technology • Internally Matched • Common-Source Configuration • Broadband Class AB Operation • RoHS* Compliant and 260 °C Reflow Compatible • +50 V Typical Operation • MTTF = 600 years TJ < 200 °C • Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics. • Military radar for IFF and Data Links. The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Ordering Information MAGX-000912-250L00 250W GaN Power Transistor MAGX-000912-SB1PPR Evaluation Test Fixture Typical RF Performance under standard operating conditions, POUT = 250 W Peak Freq Gain Eff. Droop VSWR-S VSWR-T 10:1 1030 1090 1150 1215 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. For further information and support please visit: MAGX-000912-250L00 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C Parameter Test Conditions Symbol Min. RF Functional Tests Peak Input Power Gain Drain Efficiency Load Mismatch Stability VDD = 50 V, IDQ = 250 mA, Pulse Width = 128 us, Duty Cycle = 10%, POUT = 125 W Peak W avg. GP ηD VSWR-S Load Mismatch Tolerance VSWR-T - Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 30 mA VDS = 5 V, ID = 7 mA Input Capacitance Not applicable - Input matched VDS = 50 V, VGS = -8 V, Freq. = 1 MHz

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MAGX-000912-250L00

GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty
• GaN on SiC Depletion-Mode Transistor Technology
• Internally Matched
• Common-Source Configuration
• Broadband Class AB Operation
• RoHS* Compliant and 260 °C Reflow Compatible
• +50 V Typical Operation
• MTTF = 600 years TJ < 200 °C
• Civilian Air Traffic Control ATC , L-Band Secondary Radar for IFF and Mode-S Avionics.
• Military radar for IFF and Data Links.

The MAGX-000912-250L00 is a gold metalized matched Gallium Nitride GaN on Silicon Carbide RF power transistor optimized for civilian and military pulsed avionics amplifier applications for the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.
Ordering Information

MAGX-000912-250L00
250W GaN Power Transistor

MAGX-000912-SB1PPR Evaluation Test Fixture

Typical RF Performance under standard operating conditions, POUT = 250 W Peak

Freq

Gain

Eff.

Droop VSWR-S VSWR-T
10:1
1030
1090
1150
1215
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.

For further information and support please visit:

MAGX-000912-250L00

GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128µs Pulse, 10% Duty

Electrical Specifications Freq. = 960 - 1215 MHz, TA = 25°C

Parameter

Test Conditions

Symbol Min.

RF Functional Tests

Peak Input Power Gain

Drain Efficiency Load Mismatch Stability

VDD = 50 V, IDQ = 250 mA, Pulse Width = 128 us, Duty Cycle = 10%,

POUT = 125 W Peak W avg.

GP ηD VSWR-S

Load Mismatch Tolerance

VSWR-T -

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage

Forward Transconductance Dynamic Characteristics

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 30 mA VDS = 5 V, ID = 7 mA

Input Capacitance

Not applicable - Input matched

VDS = 50 V, VGS = -8 V, Freq. = 1 MHz

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Datasheet ID: MAGX-000912-SB1PPR 646876