MT4HTF3264HZ-667G1

MT4HTF3264HZ-667G1 Datasheet

MT4HTF3264HZ 256MB MT4HTF6464HZ 512MB MT4HTF12864HZ 1GB

Part	Datasheet
MT4HTF3264HZ-667G1	MT4HTF3264HZ-667G1 (pdf)

Related Parts	Information
MT4HTF12864HZ-667C1	MT4HTF12864HZ-667C1
MT4HTF12864HZ-800C1	MT4HTF12864HZ-800C1

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256MB, 512MB, 1GB x64, SR 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT4HTF3264HZ 256MB MT4HTF6464HZ 512MB MT4HTF12864HZ 1GB • 200-pin, small-outline dual in-line memory module SODIMM • Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , 1GB 128 Meg x 64 • VDD = VDDQ = 1.8V • VDDSPD = • JEDEC-standard 1.8V I/O SSTL_18-compatible • Differential data strobe DQS, DQS# option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent opera- tion • Programmable CAS latency CL • Posted CAS additive latency AL • WRITE latency = READ latency - 1 tCK • Programmable burst lengths BL 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination ODT • Halogen-free • Serial presence detect SPD with EEPROM • Gold edge contacts • Single rank Figure 1 200-Pin SODIMM MO-224 R/C Module height 30mm 1.181in Options • Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1 • Package 200-pin DIMM halogen-free • Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667 Marking None I -80E -800 -667 Notes Contact Micron for industrial temperature module offerings. CL = CAS READ latency. Table 1 Key Timing Parameters Speed Industry Data Rate MT/s tRCD Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 -80E PC2-6400 -800 PC2-6400 -667 PC2-5300 -53E PC2-4200 -40E PC2-3200 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

PDF Datasheet Preview

256MB, 512MB, 1GB x64, SR 200-Pin DDR2 SODIMM Features

DDR2 SDRAM SODIMM

MT4HTF3264HZ 256MB MT4HTF6464HZ 512MB MT4HTF12864HZ 1GB
• 200-pin, small-outline dual in-line memory module SODIMM
• Fast data transfer rates PC2-3200, PC2-4200, PC2-5300, or PC2-6400
• 256MB 32 Meg x 64 , 512MB 64 Meg x 64 , 1GB 128 Meg x 64
• VDD = VDDQ = 1.8V
• VDDSPD =
• JEDEC-standard 1.8V I/O SSTL_18-compatible
• Differential data strobe DQS, DQS# option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
tion
• Programmable CAS latency CL
• Posted CAS additive latency AL
• WRITE latency = READ latency - 1 tCK
• Programmable burst lengths BL 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination ODT
• Halogen-free
• Serial presence detect SPD with EEPROM
• Gold edge contacts
• Single rank

Figure 1 200-Pin SODIMM MO-224 R/C Module height 30mm 1.181in

Options
• Operating temperature Commercial 0°C TA +70°C Industrial TA +85°C 1
• Package 200-pin DIMM halogen-free
• Frequency/CL2 2.5ns CL = 5 DDR2-800 2.5ns CL = 6 DDR2-800 3.0ns CL = 5 DDR2-667

Marking

None I
-80E -800 -667

Notes Contact Micron for industrial temperature module offerings.

CL = CAS READ latency.

Table 1 Key Timing Parameters

Speed

Industry

Data Rate MT/s
tRCD

Grade

Nomenclature

CL = 6

CL = 5

CL = 4

CL = 3
-80E

PC2-6400
-800

PC2-6400
-667

PC2-5300
-53E

PC2-4200
-40E

PC2-3200

Micron Technology, Inc. reserves the right to change products or specifications without notice. 2009 Micron Technology, Inc. All rights reserved.

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MT4HTF3264HZ-667G1 Datasheet file may be downloaded here without warranties.

Datasheet ID: MT4HTF3264HZ-667G1 648470