KSH350TM
KSH350TM Datasheet
KSH350
| Part | Datasheet |
|---|---|
KSH350TM |
KSH350TM (pdf) |
| Related Parts | Information |
|---|---|
KSH350TF |
KSH350TF |
| PDF Datasheet Preview |
|---|
| KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead I-PAK, “- I” Suffix D-PAK 1 I-PAK 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter VCBO VCEO VEBO IC ICP PC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Collector Current Pulse Collector Dissipation TC = 25°C Collector Dissipation Ta = 25°C Junction Temperature Electrical Characteristics TC=25°C unless otherwise noted Parameter Test Condition VCEO sus * Collector-Emitter Sustaining Voltage ICEO Collector Cut-off Current IEBO Emitter Cut-off Current * DC Current Gain * Pulse Test Duty IC = -1mA, IB = 0 VCB = -300V, IE =0 VEB = -3V, IC = 0 VCE = -10V, IC = -50mA Value - 300 - 300 -3 - - 15 150 Units V A W °C Min. -300 Max. Units V mA 2002 Fairchild Semiconductor Corporation KSH350 1005µ0s0µ1sms DC Typical Characteristics hFE, DC CURRENT GAIN 1000 100 VCE = -10V -100 -1000 IC[A], COLLECTOR CURRENT Figure DC current Gain |
| More datasheets: HSDL-3612-007 | HSDL-3612-038 | HSDL-3612-037 | MT4HTF12864HZ-667C1 | MT4HTF12864HZ-800C1 | MT4HTF3264HZ-667G1 | HUF76619D3S | HUF76619D3ST | 120-102EAJ-Q01 | KSH350TF |
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