HUF76619D3S

HUF76619D3S Datasheet

HUF76619D3, HUF76619D3S

Part	Datasheet
HUF76619D3S	HUF76619D3S (pdf)

Related Parts	Information
HUF76619D3ST	HUF76619D3ST

PDF Datasheet Preview
Data Sheet HUF76619D3, HUF76619D3S November 1999 File Number Title UF7 19D UF76 9D3 18A, 100V, Ohm, N-Channel, Logic Level Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE DRAIN FLANGE bjec 0V, 87 m, A, HUF76619D3 GATE SOURCE HUF76619D3S • Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V • Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models - • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves Ordering Information gic vel raF wer OSF utho eyw s tersi rpor on, gic vel raF PACKAGE BRAND HUF76619D3 TO-251AA 76619D HUF76619D3S TO-252AA 76619D NOTE When ordering, use the entire part number. Add the T to obtain the TO-252AA variant in tape and reel, e.g., HUF76619D3ST. Absolute Maximum Ratings TC = 25oC, Unless Otherwise HUF76619D3, HUF76619D3S UNITS Drain to Source Voltage Note 1 .VDSS Drain to Gate Voltage RGS = Note 1 VDGR Gate to Source Voltage .VGS ±16 Drain Current Continuous T C T C T C 2125050ooCCoC,, VV, VGGGSSS===1505VVV Figure 18 12 Continuous TC = 100oC, VGS = 4.5V Figure 2 ID Pulsed Drain Current IDM Figure 4 Pulsed Avalanche Rating UIS Figures 6, 17, 18 Power Dissipation Derate Above 25oC Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES: TJ = 25oC to 150oC. 75 -55 to 175 300 260 W/oC CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied. Product reliability information can be found at For severe environments, see our Automotive HUFA series. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. 2001 Fairchild Semiconductor Corporation HUF76619D3, HUF76619D3S Electrical TC = 25oC, Unless Otherwise PARAMETER TEST CONDITIONS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ON STATE SPECIFICATIONS BV DSS I DSS I GSS ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12 VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC

PDF Datasheet Preview

Data Sheet

HUF76619D3, HUF76619D3S

November 1999 File Number

Title UF7 19D

UF76 9D3
18A, 100V, Ohm, N-Channel, Logic Level Power MOSFET

Packaging

JEDEC TO-251AA

JEDEC TO-252AA

DRAIN FLANGE

SOURCE DRAIN GATE

DRAIN FLANGE
bjec
0V, 87 m, A,

HUF76619D3

GATE SOURCE

HUF76619D3S
• Ultra Low On-Resistance - rDS ON = VGS = 10V - rDS ON = VGS = 5V
• Simulation Models - Temperature Compensated and SABER Electrical Models - Spice and SABER Thermal Impedance Models -
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
gic vel raF
wer OSF utho
eyw s tersi
rpor on,
gic vel raF

PACKAGE

BRAND

HUF76619D3

TO-251AA
76619D

HUF76619D3S

TO-252AA
76619D
NOTE When ordering, use the entire part number. Add the T to obtain the TO-252AA variant in tape and reel, e.g., HUF76619D3ST.

Absolute Maximum Ratings TC = 25oC, Unless Otherwise

HUF76619D3, HUF76619D3S

UNITS

Drain to Source Voltage Note 1 .VDSS

Drain to Gate Voltage RGS = Note 1 VDGR

Gate to Source Voltage .VGS
±16

Drain Current

Continuous

T C T C T C
2125050ooCCoC,, VV, VGGGSSS===1505VVV

Figure
18 12

Continuous TC = 100oC, VGS = 4.5V Figure 2 ID

Pulsed Drain Current IDM

Figure 4

Pulsed Avalanche Rating UIS

Figures 6, 17, 18

Power Dissipation Derate Above 25oC

Operating and Storage Temperature TJ, TSTG Maximum Temperature for Soldering

Leads at 0.063in 1.6mm from Case for 10s. TL Package Body for 10s, See Techbrief TB334 Tpkg NOTES:

TJ = 25oC to 150oC.
75 -55 to 175
300 260

W/oC

CAUTION Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this is not implied.

Product reliability information can be found at For severe environments, see our Automotive HUFA series.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
2001 Fairchild Semiconductor Corporation

HUF76619D3, HUF76619D3S

Electrical TC = 25oC, Unless Otherwise

PARAMETER

TEST CONDITIONS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate to Source Leakage Current ON STATE SPECIFICATIONS

BV DSS I DSS I GSS

ID = 250µA, VGS = 0V Figure 12 ID = 250µA, VGS = 0V , TC = -40oC Figure 12

VDS = 95V, VGS = 0V VDS = 90V, VGS = 0V, TC = 150oC

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Datasheet ID: HUF76619D3S 633965