MAGX-000035-015000

MAGX-000035-015000 Datasheet

MAGX-000035-015000 MAGX-000035-01500S

Part	Datasheet
MAGX-000035-015000	MAGX-000035-015000 (pdf)

Related Parts	Information
MAGX-L20035-01500S	MAGX-L20035-01500S
MAGX-L20035-015000	MAGX-L20035-015000
MAGX-000035-01500S	MAGX-000035-01500S

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MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - GHz • GaN on SiC Depletion Mode Transistor • Common-Source Configuration • Broadband Class AB Operation • Thermally Enhanced Package Flanged Cu/W, Flangeless Cu • RoHS* Compliant • +50V Typical Operation • MTTF = 600 years TJ < 200°C Primary Applications • Commercial Wireless Infrastructure WCDMA, LTE, WiMAX • Air Traffic Control Radar - Commercial • Weather Radar - Commercial • Military Radar - Military • Public Radio • Industrial, Scientific and Medical • SATCOM • Instrumentation The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01500X is constructed using a thermally enhanced flanged Cu/W or flangeless Cu ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. MAGX-000035-015000 Flanged MAGX-000035-01500S Flangeless Ordering Information MAGX-000035-015000 Flanged, Bulk Packaging MAGX-000035-01500S Flangeless, Bulk Packaging MAGX-L20035-015000 MAGX-L20035-01500S Sample Board - GHz, Flanged Sample Board - GHz, Flangeless 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information. • North America Tel / Fax • Europe Tel / Fax • Asia/Pacific Tel / Fax: MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - GHz Electrical Specifications1 Freq. = - GHz, TA = 25°C Parameter Test Conditions RF Functional Tests VDD = 50 V, IDQ = 15 mA, 1 ms Pulse, 10% Duty Output Power PIN= W POUT Power Gain Drain Efficiency PIN= W PIN= W Droop PIN= W Droop Load Mismatch Stability Load Mismatch Tolerance PIN= W PIN= W VSWR-S VSWR-T Min. Typ. 63 5:1 10:1 Max. Units Electrical Characteristics TA = 25°C Parameter Test Conditions DC Characteristics Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 2 mA VDS = 5 V, ID = 500 mA VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz Symbol Min. IDS VGS TH CISS

PDF Datasheet Preview

MAGX-000035-015000 MAGX-000035-01500S

GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - GHz
• GaN on SiC Depletion Mode Transistor
• Common-Source Configuration
• Broadband Class AB Operation
• Thermally Enhanced Package Flanged Cu/W,

Flangeless Cu
• RoHS* Compliant
• +50V Typical Operation
• MTTF = 600 years TJ < 200°C

Primary Applications
• Commercial Wireless Infrastructure WCDMA, LTE, WiMAX
• Air Traffic Control Radar - Commercial
• Weather Radar - Commercial
• Military Radar - Military
• Public Radio
• Industrial, Scientific and Medical
• SATCOM
• Instrumentation

The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride GaN on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs.

The MAGX-000035-01500X is constructed using a thermally enhanced flanged Cu/W or flangeless Cu ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies.

MAGX-000035-015000 Flanged

MAGX-000035-01500S Flangeless
Ordering Information

MAGX-000035-015000 Flanged, Bulk Packaging

MAGX-000035-01500S Flangeless, Bulk Packaging

MAGX-L20035-015000 MAGX-L20035-01500S

Sample Board - GHz, Flanged

Sample Board - GHz, Flangeless
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.

M/A-COM Technology Solutions Inc. MACOM and its affiliates reserve the right to make changes to the product s or information contained herein without notice. Visit for additional data sheets and product information.
• North America Tel / Fax
• Europe Tel / Fax
• Asia/Pacific Tel / Fax:

MAGX-000035-015000 MAGX-000035-01500S

GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - GHz

Electrical Specifications1 Freq. = - GHz, TA = 25°C

Parameter

Test Conditions

RF Functional Tests VDD = 50 V, IDQ = 15 mA, 1 ms Pulse, 10% Duty

Output Power

PIN= W

POUT

Power Gain Drain Efficiency

PIN= W

PIN= W

Droop

PIN= W

Droop

Load Mismatch Stability Load Mismatch Tolerance

PIN= W PIN= W

VSWR-S VSWR-T

Min.

Typ.
63 5:1 10:1

Max. Units

Electrical Characteristics TA = 25°C

Parameter

Test Conditions

DC Characteristics

Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance Dynamic Characteristics

VGS = -8 V, VDS = 175 V VDS = 5 V, ID = 2 mA VDS = 5 V, ID = 500 mA

VDS = 0 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz VDS = 50 V, VGS = -8 V, F = 1 MHz

Symbol Min.

IDS VGS TH

CISS

Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MAGX-000035-015000 Datasheet file may be downloaded here without warranties.

Datasheet ID: MAGX-000035-015000 646866