FD800R17KF6CB2NOSA1
FD800R17KF6CB2NOSA1 Datasheet
FD800R17KF6C_B2
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FD800R17KF6CB2NOSA1 |
FD800R17KF6CB2NOSA1 (pdf) |
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| IGBT-Module IGBT-modules FD800R17KF6C_B2 Kollektor-Emitter-Sperrspannung Tvj = 25°C Tvj = 125°C VCES 1700 Kollektor-Dauergleichstrom TC = 80°C, Tvj max = 150°C TC = 25°C, Tvj max = 150°C IC nom IC 800 1300 tP = 1 ms ICRM 1600 Gesamt-Verlustleistung TC = 25°C, Tvj max = 150°C Ptot 6,25 Gate-Emitter-Spitzenspannung VGES +/- 20 Kollektor-Emitter-Sättigungsspannung IC = 800 A, VGE = 15 V IC = 800 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Gate-Schwellenspannung IC = 65,0 mA, VCE = VGE, Tvj = 25°C Gateladung VGE = -15 V +15 V Tvj = 25°C Eingangskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25°C IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Tvj = 25°C Tvj = 125°C IC = 800 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Tvj = 25°C Tvj = 125°C IC = 800 A, VCE = 900 V VGE = ±15 V RGoff = 1,8 |
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