IPUH6N03LB G
IPUH6N03LB G Datasheet
IPUH6N03LB IPSH6N03LB
| Part | Datasheet |
|---|---|
IPUH6N03LB G |
IPUH6N03LB G (pdf) |
| Related Parts | Information |
|---|---|
IPSH6N03LB G |
IPSH6N03LB G |
| PDF Datasheet Preview |
|---|
| Type Power-Transistor Package Marking • Qualified according to JEDEC1 for target applications • N-channel - Logic level • Excellent gate charge x R DS on product FOM • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating RoHS compliant IPUH6N03LB IPSH6N03LB Product Summary V DS R DS on ,max ID 30 V 50 A Type IPUH6N03LB IPSH6N03LB Package Marking PG-TO251-3 H6N03LB PG-TO251-3-11 H6N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current T C=25 °C2 T C=100 °C Pulsed drain current I D,pulse T C=25 °C3 Avalanche energy, single pulse I D=50 A, R GS=25 dv /dt I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C Gate source voltage4 Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category DIN IEC 68-1 Value 50 200 160 ±20 83 -55 175 55/175/56 Unit A mJ kV/µs V W °C 2008-04-14 IPUH6N03LB IPSH6N03LB Parameter Symbol Conditions min. Values typ. Unit max. |
| More datasheets: CA3106F24-22SXB15 | T3P20FW1LX | MM74HC157N | MM74HC157SJ | MM74HC157M | MM74HC157MTCX | MM74HC157MX | MM74HC157MTC | MM74HC157SJX | FD800R17KF6CB2NOSA1 |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived IPUH6N03LBG Datasheet file may be downloaded here without warranties.