MWI225-12E9

MWI225-12E9 Datasheet


MWI 225-12 E9

Part Datasheet
MWI225-12E9 MWI225-12E9 MWI225-12E9 (pdf)
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MWI 225-12 E9

IGBT Modules Sixpack

NPT3 IGBT

IC80
= 250 A

VCES = 1200 V

V = CE sat typ. V
15 28 16
29 13 14
20 21 22
11/12
18 19
26 27
9/10
23 24

See outline drawing for pin arrangement

IGBTs Symbol VCES VGES IC25 IC80 RBSOA
tSC SCSOA Ptot Symbol

VCE sat

VGE th ICES

IGES

Conditions TVJ = 25°C to 125°C

Maximum Ratings 1200 V
t• NPT3 IGBT technology
• low saturation voltage
• low switching losses

TC = 25°C
± 20 355
uV
• square RBSOA, no latch up
• high short circuit capability A
• positive temperature coefficient for

TC = 80°C

RG = 5 TVJ = 125°C Clamped inductive load L = 100 µH
o VCE = 900 V VGE = ±15 V RG = 5 - TVJ = 125°C non-repetitive VCEmax < VCES

TC = 25°C
250 A

ICM = 500

VCEK < VCES
10 µs
e Conditions a s IC = 225 A VGE = 15 V h IC = 8 mA VGE = VCE

Characteristic Values TVJ = 25°C, unless otherwise specified
min. typ. max.

TVJ = 25°C TVJ = 125°C
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• solderable pins for PCB mounting
• package with copper base plate
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Datasheet ID: MWI225-12E9 644407