MWI 225-12 E9
Part | Datasheet |
---|---|
![]() |
MWI225-12E9 (pdf) |
PDF Datasheet Preview |
---|
MWI 225-12 E9 IGBT Modules Sixpack NPT3 IGBT IC80 = 250 A VCES = 1200 V V = CE sat typ. V 15 28 16 29 13 14 20 21 22 11/12 18 19 26 27 9/10 23 24 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC SCSOA Ptot Symbol VCE sat VGE th ICES IGES Conditions TVJ = 25°C to 125°C Maximum Ratings 1200 V t• NPT3 IGBT technology • low saturation voltage • low switching losses TC = 25°C ± 20 355 uV • square RBSOA, no latch up • high short circuit capability A • positive temperature coefficient for TC = 80°C RG = 5 TVJ = 125°C Clamped inductive load L = 100 µH o VCE = 900 V VGE = ±15 V RG = 5 - TVJ = 125°C non-repetitive VCEmax < VCES TC = 25°C 250 A ICM = 500 VCEK < VCES 10 µs e Conditions a s IC = 225 A VGE = 15 V h IC = 8 mA VGE = VCE Characteristic Values TVJ = 25°C, unless otherwise specified min. typ. max. TVJ = 25°C TVJ = 125°C easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate |
More datasheets: ICS853001AGLFT | DDMMN36H4SN | MF0055 | MF0045 | DF200R12W1H3FB11BPSA1 | MDM-31SH027F | DEMA-9P-F0 | FTLF1319P1BTL | ICS953805CG | NDT455N |
Notice: we do not provide any warranties that information, datasheets, application notes, circuit diagrams, or software stored on this website are up-to-date or error free. The archived MWI225-12E9 Datasheet file may be downloaded here without warranties.