DF200R12W1H3FB11BPSA1
DF200R12W1H3FB11BPSA1 Datasheet
DF200R12W1H3F_B11
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DF200R12W1H3FB11BPSA1 |
DF200R12W1H3FB11BPSA1 (pdf) |
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| IGBT-Modul IGBT-Module DF200R12W1H3F_B11 • • • Al2O3 Substrat mit kleinem thermischen Widerstand • • • VCES = 1200V IC nom = 30A / ICRM = 60A • • • • • • Digit IGBT-Modul IGBT-Module DF200R12W1H3F_B11 Tvj = 25°C TC = 80°C TC = 80°C tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Grenzlastintegral tp = 10 ms, Tvj = 25°C tp = 10 ms, Tvj = 150°C Durchlassspannung Tvj = 150°C, IF = 30 A Ersatzwiderstand Tvj = 150°C Sperrstrom Tvj = 150°C, VR = 1200 V VRRM 1200 IFRMSM IRMSM IFSM 360 290 650 420 min. typ. max. 0,95 0,10 0,10 RthJC 0,800 0,900 K/W RthCH 0,800 Tvj op -40 125 °C IGBT-Modul IGBT-Module |
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