MIO1800-17E10

MIO1800-17E10 Datasheet

MIO 1800-17E10

Part	Datasheet
MIO1800-17E10	MIO1800-17E10 (pdf)

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MIO 1800-17E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1800 A VCES = 1700 V VCE sat typ. = V IGBT Symbol VCES V VGES V IC80 A ICM A tSSyC mbol µs VCE sat VGE th ICES IGES tFeatures Conditions u VGE= 0 V Maximum Ratings 1700 ± 20 - o TC = 80°C 1800 e tp = 1 ms TC = 80°C 3600 s CVCoCn=d1it0io0n0sV; VCEM CHIP <1700 V TVJ 25°C, Character1is0tic Values unless otherwise specified a VGE < 15 V TVJ < 125°C min. typ. max. • IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance • AC power converters for - industrial drives - windmills - traction • LASER pulse generator IC = 1800 A VGE = 15 V TVJ = 25°C TVJ = 125°C h IC = 240 mA VCE = VGE p VCE = 1700 V VGE = 0 V TVJ = 125°C 120 mA VCE = 0 V VGE = ± 20 V TVJ = 125°C 500 nA t d on tr td off tf Eon Eoff

PDF Datasheet Preview

MIO 1800-17E10

IGBT Module Single switch

Short Circuit SOA Capability Square RBSOA

IC80
= 1800 A

VCES
= 1700 V

VCE sat typ. = V

IGBT

Symbol VCES V VGES V IC80 A ICM A tSSyC mbol µs

VCE sat

VGE th ICES IGES
tFeatures

Conditions
u VGE= 0 V

Maximum Ratings 1700
± 20
- o TC = 80°C
1800
e tp = 1 ms TC = 80°C
3600
s CVCoCn=d1it0io0n0sV;

VCEM

CHIP
<1700 V TVJ
25°C,

Character1is0tic Values unless otherwise specified
a VGE < 15 V TVJ < 125°C
min. typ. max.
• IGBT - Low-loss - Smooth switching waveforms for good EMC
• Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
• AC power converters for - industrial drives - windmills - traction
• LASER pulse generator

IC = 1800 A VGE = 15 V TVJ = 25°C TVJ = 125°C
h IC = 240 mA VCE = VGE p VCE = 1700 V VGE = 0 V TVJ = 125°C
120 mA

VCE = 0 V VGE = ± 20 V TVJ = 125°C
500 nA
t d on
tr td off tf Eon

Eoff

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Datasheet ID: MIO1800-17E10 644379