SEP8507-001
SEP8507-001 Datasheet
SEP8507
| Part | Datasheet |
|---|---|
SEP8507-001 |
SEP8507-001 (pdf) |
| PDF Datasheet Preview |
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| SEP8507 GaAs Infrared Emitting Diode FEATURES • End-emitting plastic package • nominal beam angle • 935 nm wavelength • Low profile for design flexibility • Mechanically and spectrally matched to SDP8407 phototransistor The SEP8507 is a gallium arsenide infrared emitting diode molded in an end-emitting red plastic package. The chip is positioned to emit radiation from the top of the package. Lead lengths are staggered to provide a simple method of polarity identification. INFRA-18.TIF OUTLINE DIMENSIONS in inches mm Tolerance 3 plc decimals 2 plc decimals DIM_009.cdr Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8507 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS Free-Air Temperature unless otherwise noted Continuous Forward Current 60 mA Power Dissipation 100 mW [À] Operating Temperature Range Storage Temperature Range Soldering Temperature 5 sec Notes Derate linearly from free-air temperature at the rate of SCHEMATIC Honeywell reserves the right to make changes in order to improve design and supply the best products possible. SEP8507 GaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs Angular Displacement gra_032.ds4 Relative intensity -160 -120 -80 -40 0 +40 +80 +120 +160 Angular displacement - degrees Fig. 3 Forward Voltage vs Forward Current Forward voltage - V Forward current - mA gra_003.ds4 |
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