IRFS540A

IRFS540A Datasheet

IRFS540A

Part	Datasheet
IRFS540A	IRFS540A (pdf)

PDF Datasheet Preview
Advanced Power MOSFET Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 ΟC Operating Temperature Lower Leakage Current 10 µ A Max. VDS = 100V Lower RDS ON : Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG Characteristic Drain-to-Source Voltage Continuous Drain Current TC=25 ΟC Continuous Drain Current TC=100 ΟC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation TC=25 ΟC Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds IRFS540A BVDSS = 100 V RDS on = ID = 17 A TO-220F 1.Gate Drain Source Value 100 17 12 110 +_ 20 385 17 39 - 55 to +175 Units V A V mJ A mJ V/ns W/ ΟC Thermal Resistance Characteristic Junction-to-Case Junction-to-Ambient 1999 Fairchild Semiconductor Corporation Typ. --- Max. Units ΟC /W IRFS540A N-CHANNEL POWER MOSFET Electrical Characteristics TC=25ΟC unless otherwise specified Symbol BVDSS VGS th IGSS IDSS

PDF Datasheet Preview

Advanced Power MOSFET

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 ΟC Operating Temperature Lower Leakage Current 10 µ A Max. VDS = 100V Lower RDS ON :

Absolute Maximum Ratings

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt

TJ , TSTG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current TC=25 ΟC

Continuous Drain Current TC=100 ΟC

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation TC=25 ΟC Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

IRFS540A

BVDSS = 100 V RDS on = ID = 17 A

TO-220F
1.Gate Drain Source

Value 100 17 12 110 +_ 20 385 17 39
- 55 to +175

Units V

A V mJ A mJ V/ns W/ ΟC

Thermal Resistance

Characteristic Junction-to-Case Junction-to-Ambient
1999 Fairchild Semiconductor Corporation

Typ. ---

Max.

Units ΟC /W

IRFS540A

N-CHANNEL POWER MOSFET

Electrical Characteristics TC=25ΟC unless otherwise specified

Symbol BVDSS

VGS th

IGSS

IDSS

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Datasheet ID: IRFS540A 634055