APTGF75DA120T1G

APTGF75DA120T1G Datasheet

APTGF75DA120T1G

Part	Datasheet
APTGF75DA120T1G	APTGF75DA120T1G (pdf)

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APTGF75DA120T1G Boost chopper NPT IGBT Power Module VCES = 1200V IC = 75A Tc = 80°C Pins 1/2 3/4 5/6 must be shorted together Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Very low stray inductance • Internal thermistor for temperature monitoring • High level of integration • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 IC Continuous Collector Current Tc = 25°C Tc = 80°C ICM Pulsed Collector Current Tc = 25°C VGE Gate Emitter Voltage ±20 PD Maximum Power Dissipation Tc = 25°C Tj = 150°C 150A 1200V These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on APTGF75DA120T1G All ratings Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 25°C Tj = 125°C 250 500 VCE sat Collector Emitter saturation Voltage VGE =15V IC = 75A Tj = 25°C Tj = 125°C VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current VGE = VCE, IC = mA

PDF Datasheet Preview

APTGF75DA120T1G

Boost chopper NPT IGBT Power Module

VCES = 1200V IC = 75A Tc = 80°C

Pins 1/2 3/4 5/6 must be shorted together

Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
• Non Punch Through NPT Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• Outstanding performance at high frequency operation
• Direct mounting to heatsink isolated package
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant

Absolute maximum ratings

Parameter

Max ratings

Unit

VCES Collector - Emitter Breakdown Voltage
1200

IC Continuous Collector Current

Tc = 25°C

Tc = 80°C

ICM Pulsed Collector Current

Tc = 25°C

VGE Gate Emitter Voltage
±20

PD Maximum Power Dissipation

Tc = 25°C

Tj = 150°C 150A 1200V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on

APTGF75DA120T1G

All ratings Tj = 25°C unless otherwise specified Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

ICES Zero Gate Voltage Collector Current

VGE = 0V VCE = 1200V

Tj = 25°C Tj = 125°C
250 500

VCE sat Collector Emitter saturation Voltage

VGE =15V IC = 75A

Tj = 25°C Tj = 125°C

VGE th Gate Threshold Voltage IGES Gate Emitter Leakage Current

VGE = VCE, IC = mA

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Datasheet ID: APTGF75DA120T1G 648409