IXTP1N120P
IXTP1N120P Datasheet
IXTA1N120P IXTP1N120P
| Part | Datasheet |
|---|---|
IXTP1N120P |
IXTP1N120P (pdf) |
| Related Parts | Information |
|---|---|
IXTA1N120P |
IXTA1N120P |
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| Polar VHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA1N120P IXTP1N120P VDSS VDGR VGSS VGSM ID25 IDM IA EAR EAS dV/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150°C TC = 25°C 1.6mm from case for 10s Plastic body for 10s Mounting torque TO-220 TO-263 TO-220 Maximum Ratings 1200 1200 ±20 ±30 V/ns -55 +150 -55 +150 Nm/lb.in. Test Conditions TJ = 25°C, unless otherwise specified BVDSS VGS = 0V, ID = 250uA VGS th VDS = VGS, ID = 50uA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 125°C RDS on VGS = 10V, ID = • ID25, Note 1 Characteristic Values Min. Typ. Max. 1200 ±50 nA 5 uA 200 uA 20 Ω |
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