IRGP4063DPbF IRGP4063D-EPbF
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IRGP4063D-EPBF (pdf) |
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IRGP4063DPBF |
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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current ILM • Positive VCE ON Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package n-channel VCES = 600V IC = 48A, TC = 100°C tSC 5us, TJ max = 175°C VCE on typ. = 1.65V • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE ON and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C G IRGP4063DPbF E C G IRGP4063D-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings VCES Parameter Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current c Clamped Inductive Load Current IF TC = 25°C Diode Continous Forward Current IF TC = 100°C IF M Diode Continous Forward Current e Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation PD TC = 100°C Maximum Power Dissipation Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter IGBT |
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