IRGP4063DPBF

IRGP4063DPBF Datasheet

IRGP4063DPbF IRGP4063D-EPbF

Part	Datasheet
IRGP4063DPBF	IRGP4063DPBF (pdf)

Related Parts	Information
IRGP4063D-EPBF	IRGP4063D-EPBF

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IRGP4063DPbF IRGP4063D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • Low VCE ON Trench IGBT Technology • Low switching losses • Maximum Junction temperature 175 °C • 5 uS short circuit SOA • Square RBSOA • 100% of the parts tested for 4X rated current ILM • Positive VCE ON Temperature co-efficient • Ultra fast soft Recovery Co-Pak Diode • Tight parameter distribution • Lead Free Package n-channel VCES = 600V IC = 48A, TC = 100°C tSC 5us, TJ max = 175°C VCE on typ. = 1.65V • High Efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to Low VCE ON and Low Switching losses • Rugged transient Performance for increased reliability • Excellent Current sharing in parallel operation • Low EMI C G IRGP4063DPbF E C G IRGP4063D-EPbF G Gate C Collector E Emitter Absolute Maximum Ratings VCES Parameter Collector-to-Emitter Voltage IC TC = 25°C Continuous Collector Current IC TC = 100°C Continuous Collector Current Pulse Collector Current c Clamped Inductive Load Current IF TC = 25°C Diode Continous Forward Current IF TC = 100°C IF M Diode Continous Forward Current e Diode Maximum Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD TC = 25°C Maximum Power Dissipation PD TC = 100°C Maximum Power Dissipation Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Thermal Resistance Parameter IGBT

PDF Datasheet Preview

IRGP4063DPbF IRGP4063D-EPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• Low VCE ON Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 uS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current ILM
• Positive VCE ON Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
n-channel

VCES = 600V IC = 48A, TC = 100°C tSC 5us, TJ max = 175°C VCE on typ. = 1.65V
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to

Low VCE ON and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI

C G IRGP4063DPbF

E C G IRGP4063D-EPbF

G Gate

C Collector

E Emitter

Absolute Maximum Ratings

VCES

Parameter

Collector-to-Emitter Voltage

IC TC = 25°C

Continuous Collector Current

IC TC = 100°C

Continuous Collector Current

Pulse Collector Current
c Clamped Inductive Load Current

IF TC = 25°C

Diode Continous Forward Current

IF TC = 100°C IF M

Diode Continous Forward Current
e Diode Maximum Forward Current

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

PD TC = 25°C

Maximum Power Dissipation

PD TC = 100°C

Maximum Power Dissipation

Operating Junction and

TSTG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter

IGBT

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Datasheet ID: IRGP4063DPBF 639070