IXKP20N60C5M

IXKP20N60C5M Datasheet


IXKP 20N60C5M

Part Datasheet
IXKP20N60C5M IXKP20N60C5M IXKP20N60C5M (pdf)
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IXKP 20N60C5M

CoolMOS 1 Power MOSFET

Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge

Preliminary data

ID25

VDSS
= 600 V

R = DS on max Ω

TO-220 FP

MOSFET

VDSS VGS

ID25 ID90 EAS EAR dV/dt

Conditions TVJ = 25°C

TC = 25°C TC = 90°C
single pulse repetitive

ID = A TC = 25°C

MOSFET dV/dt ruggedness VDS = V

Maximum Ratings
600 V
± 20
435 mJ
50 V/ns

RDSon VGS th IDSS

IGSS Ciss Coss Qg Qgs Qgd td on tr td off tf RthJC

Conditions

Characteristic Values TVJ = 25°C, unless otherwise
min. typ. max.

VGS = 10 V ID = 10 A VDS = VGS ID = mA VDS = 600 V VGS = 0 V

VGS = ± 20 V VDS = 0 V VGS = 0 V VDS = 100 V f = 1 MHz

TVJ = 25°C TVJ = 125°C

VGS = 0 to 10 V VDS = 400 V ID = 10 A

VGS = 10 V VDS = 400 V ID = 10 A RG = Ω
1520 72
200 mΩ
1 µA µA
100 nA
30 nC
• fast CoolMOS 1 power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching UIS - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
• Switched mode power supplies SMPS
• Uninterruptible power supplies UPS
• Power factor correction PFC
• Welding
• Inductive heating
• PDP and LCD adapter
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Datasheet ID: IXKP20N60C5M 644320