APTM20DHM16TG
APTM20DHM16TG Datasheet
APTM20DHM16TG
| Part | Datasheet |
|---|---|
APTM20DHM16TG |
APTM20DHM16TG (pdf) |
| PDF Datasheet Preview |
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| APTM20DHM16TG Asymmetrical - Bridge MOSFET Power Module VDSS = 200V RDSon = typ Tj = 25°C ID = 104A Tc = 25°C VBUS Q1 O UT1 OUT2 CR2 0/VBUS SENSE NT C1 0/V BU S VBUS SENSE G4 S4 NT C2 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives • Power MOS MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration VBUS SENSE VB US S1 G1 G4 S4 0/VBUS 0/VBUS SENSE OUT2 OUT1 NTC2 NTC1 • Outstanding performance at high frequency operation • Direct mounting to heatsink isolated package • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Parameter Max ratings Unit VDSS IDM VGS RDSon Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Tc = 25°C Tc = 80°C ±30 PD Maximum Power Dissipation Tc = 25°C IAR Avalanche current repetitive and non repetitive |
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