BG3130RE6327BTSA1

BG3130RE6327BTSA1 Datasheet

BG3130...

Part	Datasheet
BG3130RE6327BTSA1	BG3130RE6327BTSA1 (pdf)

Related Parts	Information
BG3130E6327HTSA1	BG3130E6327HTSA1

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BG3130... DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package • Integrated gate protection diodes • High AGC-range, low noise figure, high gain • Improved cross modulation at gain reduction BG3130 BG3130R Input RG1 Drain RF Output + DC ESD Electrostatic discharge sensitive device, observe handling precaution! Type BG3130 BG3130R Package SOT363 Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D 5=G2 Marking 6=G1 KAs 6=G1** KHs * For amp. A ** for amp. B 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch Value 8 25 1 6 200 -55 150 Unit V mA V mW °C 2005-11-03 BG3130... Thermal Resistance Parameter Channel - soldering point1 Symbol Rthchs Value Unit Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA Values Unit min. typ. max. V BR DS +V BR G1SS 6 +V BR G2SS 6 +IG1SS 50 µA +IG2SS IDSS IDSX 50 nA 10 µA VG1S p VG2S p

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BG3130...

DUAL N-Channel MOSFET Tetrode
• Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL
• Two AGC amplifiers in one single package
• Integrated gate protection diodes
• High AGC-range, low noise figure, high gain
• Improved cross modulation at gain reduction

BG3130 BG3130R

Input RG1

Drain

RF Output + DC

ESD Electrostatic discharge sensitive device, observe handling precaution!

Type BG3130 BG3130R

Package SOT363

Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D** 5=G2

Marking 6=G1** KAs 6=G1** KHs
* For amp. A ** for amp. B 180° rotated tape loading orientation available

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature

VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch

Value 8 25 1 6 200
-55 150

Unit V mA

V mW °C
2005-11-03

BG3130...

Thermal Resistance Parameter Channel - soldering point1

Symbol Rthchs

Value

Unit

Electrical Characteristics Parameter

DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, VG1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V, VG1S = 0 V, VDS = 0 V Drain current VDS = 5 V, VG1S = 0 V, VG2S = V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 120 Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 µA Gate2-source pinch-off voltage VDS = 5 V, ID = 20 µA

Values

Unit
min. typ. max.

V BR DS
+V BR G1SS 6
+V BR G2SS 6
+IG1SS
50 µA
+IG2SS IDSS IDSX
50 nA
10 µA

VG1S p

VG2S p

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Datasheet ID: BG3130RE6327BTSA1 637691