IXGN50N60BD3
IXGN50N60BD3 Datasheet
IXGN 50N60BD2 IXGN 50N60BD3
| Part | Datasheet |
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IXGN50N60BD3 |
IXGN50N60BD3 (pdf) |
| Related Parts | Information |
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IXGN50N60BD2 |
IXGN50N60BD2 |
| PDF Datasheet Preview |
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| HiPerFASTTM IGBT with HiPerFRED Buck & boost configurations IXGN 50N60BD2 IXGN 50N60BD3 VCES IC25 VCE sat tfi = 600 V = 75 A = V = 150 ns ...BD2 ...BD3 IGBT Symbol Test Conditions V CES VCGR 25°C 150°C TJ = 25°C to 150°C RGE = 1 MW VGES V Continuous Transient IC25 TC = 25°C IC90 TC = 90°C TC = 25°C, 1 ms SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W RBSOA Clamped inductive load, L = 30 mH PC VRRM IFAVM IFRM PD TJ T Tstg M TC = 25°C TC = 70°C rectangular, d = 50% tP z<10 ms pulse width limited by TJ TC = 25°C Mounting torque Terminal connection torque M4 Weight Maximum lead temperature for soldering mm in. from case for 10 s Maximum Ratings ±20 ±30 ICM = 100 VCES -40 +150 -40 +150 Nm/lb.in. Nm/lb.in. Diode Case BVCES VGE th I |
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