SPB100N06S2L-05
SPB100N06S2L-05 Datasheet
SPP100N06S2L-05 SPB100N06S2L-05
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SPB100N06S2L-05 |
SPB100N06S2L-05 (pdf) |
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SPP100N06S2L-05 |
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| Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated SPP100N06S2L-05 SPB100N06S2L-05 Product Summary RDS on max. SMD version 100 A P- TO263 -3-2 P- TO220 -3-1 Type Package Ordering Code SPP100N06S2L-05 P- TO220 -3-1 Q67060-S6043 SPB100N06S2L-05 P- TO263 -3-2 Q67060-S6042 Marking PN06L05 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current 1 TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=80A, VDD=25V, IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category DIN IEC 68-1 ID puls EAR dv/dt VGS Ptot Tj , Tstg Value 100 400 ±20 300 +175 55/175/56 Unit A kV/µs V W °C 2003-05-09 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: min. footprint 6 cm2 cooling area 3 SPP100N06S2L-05 SPB100N06S2L-05 Values Unit min. typ. max. RthJC RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage |
| More datasheets: UC3844DX | UC3842D | UC3844D | UC3842N | UC3844N | 6915-1002-030 | ICPL2601SMT&R | ICPL2601 | DEME9SA197 | SPP100N06S2L-05 |
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