IXFR38N80Q2

IXFR38N80Q2 Datasheet

IXFR 38N80Q2

Part	Datasheet
IXFR38N80Q2	IXFR38N80Q2 (pdf)

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HiPerFETTM MOSFET Q2-Class IXFR 38N80Q2 Electrically Isolated Back Surface VDSS = 800 V ID25 = 28 A RDS on = 240 trr 250 ns Preliminary Data Sheet VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight Test Conditions TTJJ = 25°C to 150°C = 25°C to 150°C RGS = 1 Continuous Transient TTCC = 25°C = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C mm in from case for 10 s 50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force Maximum Ratings ±30 ±40 V/ns -55 +150 -55 +150 2500 3000 VDSS VGS th IGSS IDSS RDS on Test Conditions Characteristic Values TJ = 25°C, unless otherwise specified min. typ. max. VGS = 0 V, ID = 3mA

PDF Datasheet Preview

HiPerFETTM MOSFET

Q2-Class

IXFR 38N80Q2

Electrically Isolated Back Surface

VDSS = 800 V

ID25
= 28 A

RDS on = 240
trr 250 ns

Preliminary Data Sheet

VDSS VDGR VGS VGSM ID25 IDM IAR

EAR EAS
dv/dt

PD TJ TJM Tstg

VISOL

FC Weight

Test Conditions

TTJJ
= 25°C to 150°C = 25°C to 150°C RGS = 1

Continuous Transient

TTCC
= 25°C = 25°C, pulse width limited by TJM

TC = 25°C

TC = 25°C TC = 25°C

IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
mm in from case for 10 s
50/60 Hz, RMS, t = 1 min ISOL = 1mA, t = 1 s Mounting Force

Maximum Ratings
±30
±40

V/ns
-55 +150
-55 +150
2500
3000

VDSS VGS th IGSS IDSS

RDS on

Test Conditions

Characteristic Values

TJ = 25°C, unless otherwise specified min. typ. max.

VGS = 0 V, ID = 3mA

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Datasheet ID: IXFR38N80Q2 644290